A 673 C2 transistor
Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.
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711002b
BLW30
OT120
-SOT12Q
MBA451
RA377
A 673 C2 transistor
RF POWER TRANSISTOR NPN vhf
BLW30
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LSE B9
Abstract: No abstract text available
Text: ÛUALITY SEMICONDUCTOR INC LSE QS3384, Q D • 7m3bô03 OOGlMll 355 QS32384 High Speed CMOS 10-bit Bus Switches QS32384 FEATURES/BENEFITS ■ • • ■ • 5£1 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3384
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QS3384,
QS32384
10-bit
24-pin
QS3384
QS32384
MDSL-00032-01
LSE B9
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2N4949
Abstract: 2N4948
Text: MO TO R O L A SC DIODE S/ OPT O 2SE D b3t72-SS 0000=130 4 • _ T -3 2N4948 2N4949 PN Unijunction Transistors Silicon PN Unijunction Transistors , . . d e s ig n e d fo r m ilita ry a n d in d u s tria l u s e in p u lse , tim in g , trig g e rin g , se n sin g ,
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b3t72-SS
2N4948
2N4949
2N4949
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transistor mu10
Abstract: 0A81 thyristor 300 volt ujt as a relaxation oscillator motorola ujt Unit junction transistor UJT MU10 MU20 ujt trigger circuit Unijunction
Text: MOTOROLA SC DIODES/OPTÔ BSE I> b3b72SS QQÖ1213 3 • 7-3 7 -Ä / MU10 MU20 PN Unijunction Transistors Silicon Annular Unijunction Transistors . . . d e s ig n e d fo r e c o n o m ic a l, ge n era l p u rp o s e u s e in pu lse , tim in g , o s c illa to r a nd
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b3b72SS
T-37-Ã
transistor mu10
0A81
thyristor 300 volt
ujt as a relaxation oscillator
motorola ujt
Unit junction transistor UJT
MU10
MU20
ujt trigger circuit
Unijunction
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BU8304
Abstract: "tone dialer" 3.58MHZ crystal oscillator BUS304 rohm sine oscillator
Text: ROHM CO LTD MDE D E l 0003^57 SIRHM 1 OA HtHr$ IC / I C s for ÔA Applications BU8304 b - > • / O U 7, $ < T =7 T -7S-07-07 Tone P u lse Dialer • BU8304|i, ’7 7 , \fv& IS l/D im en sio n s {U nit : mm / V U Z . ? 4 - r ;7<Dffi\1&n£* 32.0 + 02 The BU8304 is a telephone LSI, provided, in a chip, with
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qg03ts7
BU8304
BUS304
T7S-07-07
BU8304|
965ms
10pps)
483ms
20pps)
"tone dialer"
3.58MHZ crystal oscillator
rohm sine oscillator
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MC34060P
Abstract: MC34060L 439 motorola MC34060
Text: MOTOROLA SC -CTELECOt1> 14E D I b3ti72S3 O G f llf iT l 5 I 'T -S S -n -'M MC34060 MC35060 MOTOROLA SW ITC H M O D E P U LSE W IDTH MODULATION C O N TRO L C IR C U IT S T h e M C 3 5 0 6 0 and M C 3 4 0 6 0 are lo w co st fixed fre q u en cy, pulse w id th m o d u la tio n c o n tro l c ir c u it s d e s ig n e d p rim a rily fo r s in g le
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b3ti72S3
MC34060
MC35060
M98SC
MC34060P
MC34060L
439 motorola
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STATES10
Abstract: No abstract text available
Text: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk
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L64245
STATES10
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Untitled
Abstract: No abstract text available
Text: AMERICA N/E LECTRON IC b3E » Gb?b7M3 GG01075 W «EDI MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 8 AMPERES* SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK • CHASSIS • PC BOARD MOUNTING INTEGRALLY MOLDED HEAT SINK PROVIDES LOW THERMAL RESISTANCE SPACE SAVING IN-LINE DESIGN
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GG01075
BRUS610
BRUS620
BRUS640
BRUS650
BRUS660
BRUS680
BRUS6100
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYP E V dss RDS(on) Id STP3N B60 STP12N B30FP 300 V 300 V < 0.4 0 Q. < 0.4 0 Q. 12A 6 .5 A . • TYPICAL RDS(on) = 0.34 £2
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STP12NB30
STP12NB30FP
STP12N
B30FP
STP12NB30/FP
O-22QFP
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pea 8601
Abstract: MCR68
Text: MO T O R O L A SC DIOD'ES/.OPTO 5SE b3b?ass ooöiin □ • D T- àS'-IS" S ilico n Controlled R ectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability
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MCR67,
MCR69)
MCR67
MCR68
MCR69
Q0S115S
pea 8601
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high
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5SMC200,
fl/89
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LNM233AS01
Abstract: LNM233KS01 LNM333AS01 LNM333KS01 LNM433AS01 LNM433KS01
Text: .•132852 DD1SP42 B3T Ul u meric uispiay 3 Digit 8. Omm (. 3” Series T yp e No. Lighting Color LNM233ASQ1. Red LNM233KS01.Red LNM333AS01. Green Pin No LNM333KS01.Green LNM433AS01. Am ber LNM433KS01.Am ber
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LNM233ASQ1.
LNM233KS01.
LNM333AS01.
LNM333KS01.
LNM433AS01.
LNM433KS01.
LNM333AS01
LNM333KS01
LNM433AS01
LNM433KS01
LNM233AS01
LNM233KS01
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74hct297
Abstract: No abstract text available
Text: T - ô o - n - o o Technical Data CD54/74HC297 CD54/74HCT297 File N um ber HARRIS SEMICOND SECTOR 27E D • 1852 4302271 0D17?b3 T Hi HAS High-Speed CMOS Logic B - t 16 -v c c Digital Phase-Locked-Loop Filter A - 2 15 — c Type Features: e n C T R -
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CD54/74HC297
CD54/74HCT297
54/74H
S4/74H
74hct297
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8U806
Abstract: 1 L 0380 R 14J7 2j0115
Text: MOTO RO LA SC XSTRS/R 12 E D I b3b?asM GoaMaas a | T-zyi* F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 .0 AM PERE DARLINGTON NPN POWER TRANSISTORS N PN D A R L IN G T O N P O W E R T R A N S IS T O R S 6 0 W ATTS 160 and 2 00 V O LTS These Darlington transistors are high voltage, high speed devices
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T0-220AB
8U806
BU807
1 L 0380 R
14J7
2j0115
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AMs03
Abstract: BU1008AF C4815 BU1008ADF p6302 AM503 AN1040 BU100
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM QDS37Ô3 2 noTb Order this data sheet by BU1008AF/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BU1008AF BU1008ADF Full Pak NPN Silicon Power Transistors Horizontal Deflection . . . specifically designed fo r use in large screen color T V deflection circuits o peratin g at
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BU1008AF/D
O-218
AN1040.
BU1008AF
BU1008ADF
AMs03
BU1008AF
C4815
p6302
AM503
AN1040
BU100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 1ZE I b3fc.72S4 GOflbaiS 7 I M A X I M U M R A T IN G S Sym bol V alu e Colle ctor-E m itte r V o lta g e R a tin g VCER 80 U n it Vdc C o llector-B ase V o lta g e VCBO 120 V dc Em itter-Base V olta g e vebo 5.0 Vdc Total D evice D issip a tio n @ T a = 25°C
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mc700p
Abstract: MC784P ADC 570 MC884P
Text: DUAL HAIF-SHIFI REGISTER \ PLASTIC M R T L MC700P/800P series MC784P • MC884P 10? ?* : H2 I ; RI 02Í i 14 n? B3 ÍR 2 12' R2 T w o h a lf sh itt re g is te rs in a s in g le p acka g e . Ea ch is a b is ta b le sto ra g e ele m e n t. E.g. in fo rm a tio n co m m g
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MC784P
MC884P
MC700P/800P
mc700p
MC784P
ADC 570
MC884P
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TAG 85 22
Abstract: TAG Semiconductors X0102 SCR TAG Semiconductors 8834 X0110 X0110BA X0110DA X0110MA X0110NA
Text: TAG SEM IC ON DU CTOR S LTD b3 ¡¡¿I flfl3i|7S0 D0D0b7fl 3 T - 8834750 TAG SEMICONDUCTORS LTD 63C TAG S EM IC O N D U C TO R S LTD 00678 D T - e l S w // X0110BAX0110NA SCR 0 .8 A S 2 0 0 -8 0 0 V 5 -2 0 pA T h e X0110 s e rie s s ilic o n co n tro lled
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X0110BA-X0110NA
X0110
X0110BA
X0110DA
X0110MA
X0110NA
Tj-25
TAG 85 22
TAG Semiconductors
X0102
SCR TAG Semiconductors
8834
X0110NA
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Untitled
Abstract: No abstract text available
Text: STD3NB30 N - CHANNEL 300V - 1.8Q - 3.2A - DPAK PowerMESH MOSFET TYPE S TD 3N B30 • . . . . . V dss R d S oii Id 300 V < 2Q. 3.2 A TYPICAL R D S (on) =1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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STD3NB30
O-252
0068772-B
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THT bsc 25
Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS
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BUT15
THT bsc 25
but15
BM 1313 diode
2SC1020
NT 407 F TRANSISTOR
transistor 3405 npn
SV0200
M70 IBM
sm 0038
3408 diode
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TRANSISTOR BC 530
Abstract: BD530 transistor bd526
Text: MOTOROLA SC ÍX ST R S /R 6367254 F} MOTOROLA ^ SC CXSTRS/R MOTOROLA B SEM IC O N D U CT O R H 96D 8 0 6 0 9 F I H TECHNICAL DATA b3tj75S4 DGflDtOI D T -3 J - <7 BD526 BD528 BD530 H PNP SILICON AMPLIFIER TRANSISTORS 6 0 - 8 0 - 1 0 0 VOLTS 10 WATTS PNP SILICON ANNULAR»
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b3tj75S4
BD526
BD528
BD530
TRANSISTOR BC 530
BD530
transistor bd526
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2N4233
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3t.7B5M 000450^ 3 | 7^33- MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2N4233A MEDIUM-POWER SILICON TRANSISTOR . . . designed for general-purpose pow er amplifier and switching applications, 5.0 AMPERE SILICON POWER TRANSISTOR
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2N4233A
2N4233
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC X S TR S/ R F 12E D I b3t.7254 GGflSEME 5 | T- 3 3 - 0 7 ' r- 33-/7 MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA N PN M JD31,C PN P M JD32,C C o m p le m e n ta ry P o w e r T r a n s isto rs D P A K For Surface M o u n t A pp lication s Designed for general purpose amplifier and low speed switching applications.
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TIP31
TIP32
MJD31,
MJD32T
MJD31C,
MJD32C
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Diode CK 66A
Abstract: No abstract text available
Text: International ioR Rectifier 4055452 b36 « I N R P D ‘ 9-595A IRFP448 HEXFET P o w e r M O S F E T • • • • • • 0015532 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching
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IRFP448
Diode CK 66A
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