IEC61000-6-3
Abstract: LDM35 LSE 0405 SPDT Relay 20v 16A LDM35HLSE
Text: Digital Panel Meters DC/AC Current and Voltage Indicator/Controller Type LDM35H • • • • • • • • Multi-input instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales
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LDM35H
200mV
18-60VAC/DC
90-260VAC/DC
LDM35HDS
IEC61000-6-3
LDM35
LSE 0405
SPDT Relay 20v 16A
LDM35HLSE
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Untitled
Abstract: No abstract text available
Text: Digital Panel Meters DC/AC Current and Voltage Indicator/Controller Type LDM35H • • • • • • • • Multi-input instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales
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LDM35H
200mV
18-60VAC/DC
90-260VAC/DC
LDM35HDS
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LTS-312 R
Abstract: No abstract text available
Text: COMPONENT RESEARCH CO I LSE D • 2303T11 0000711 G I^O Component Research - c r c J - S20 ■ M ETALLIZED POLYCARBONATE CAPACITOR G 1 2 S P E C IF IC A T IO N S M e ta llize d polycarbonate d ie le c tric , h e rm etically sealed, extended m etal film electrodes,
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2303T11
LTS-312 R
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8U806
Abstract: 1 L 0380 R 14J7 2j0115
Text: MOTO RO LA SC XSTRS/R 12 E D I b3b?asM GoaMaas a | T-zyi* F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 .0 AM PERE DARLINGTON NPN POWER TRANSISTORS N PN D A R L IN G T O N P O W E R T R A N S IS T O R S 6 0 W ATTS 160 and 2 00 V O LTS These Darlington transistors are high voltage, high speed devices
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T0-220AB
8U806
BU807
1 L 0380 R
14J7
2j0115
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Untitled
Abstract: No abstract text available
Text: 1991 LSI/CSI LS7501 LS7510 • 1235 W a lt W h itm a n R o a d , M elv ille, N Y 11747 • T e l.: 516 271-0400 • F a x : (516 271-0405 • T W X : (510) 226-7833 Revised July 1989 TONE ACTIVATED LINE ISOLATION DEVICE FEATURES: • Low power CMOS design
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LS7501
LS7510
768HZ
LS7502.
2713Hz
LS7501-LS7510
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TIP308
Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC
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b3b7254
TIP29
T1P29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
TIP308
woy transistor
transistor tip 30c
tip 30
tip 30c
tip 147 TRANSISTOR
motorola tip29
LSE 0405
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1236A MicroManager Chip FEATURES PIN ASSIGNM ENT • H olds m ic ro p ro c e s s o r in c h e c k d u rin g p o w e r vbatE tra n s ie n ts vcco[ • H a lts a n d re starts a n o u t-o f-c o n tro l m ic ro p ro c e s s o r vcc[ • M o n ito rs p u s h b u tto n fo r e x te rn a l o v e rrid e
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S1998
Abstract: .5555b AS29F040 29F040-70
Text: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current
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512KX8
5S/70/90/120/150
32-pin
AS29F040-5STC
AS29F040-70TC
AS29F040-70TI
AS29F040-90TC
AS29F040-90TI
S1998
.5555b
AS29F040
29F040-70
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA B U Z80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This TM O S P ow er FET is designed fo r high voltage, h ig h speed, lo w loss p o w e r s w itc h in g a pp licatio n s, such
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AN569,
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IR 444 H
Abstract: f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode
Text: ’ FDH/FDLL 400 / 444 C O L O R 8 A N D M AR K IN G D EV ICE FD LL400 FD LL444 1 ST B A N D 2N D BAWD BRO W N BRO W N V IO L E T GRAY L L-3 4 D O -3 5 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode
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LL-34
DO-35
MMBD1401-1405
FDWFDLL444
FDWFDLL400
FDHVFDLL444
FDH/FDLL400
FDH/FDLL444
IR 444 H
f 1405 zs
FDLL400
FDLL444
DIODE marking 327
fdh 444 diode
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LS7210
Abstract: 47k0 "digital delay" 14
Text: JUN 6 1991 LSI/CSI Ê:r LS7210 Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, NY 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405 • TWX: (510) 226-7833 Revised October 1990 PROGRAMMABLE DIGITAL DELAY TIMER
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LS7210
LS7210
47Kfi
005mF
LS72K
47k0
"digital delay" 14
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IRF 450 MOSFET
Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
Text: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high
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IRF820
IRF821
IRF823
221a-04
tq-220ab
IRF821.
IRF 450 MOSFET
IRF823
IRF820..821
72SM
MTP3N45
IRF820.821
transistor IRF 450
4570 821
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SG3526
Abstract: sg1526 7m 0880 IC SG3526J 033S sg1526 power supply
Text: SG1526 SG2526 SG3526 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA P U L S E W ID T H M O D U L A T IO N C O N T R O L C IR C U IT T h e S G 1 5 2 6 is a h ig h p e rfo rm a n c e p u ls e w id th m o d u la to r in te g ra te d circu it in te n d e d for fixe d fre q u e n c y s w it c h in g r e g u la t o r s a n d
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SG1526
SG2526
SG3526
A00WBC
Y1U19C.
M98SC
SG3526
7m 0880 IC
SG3526J
033S
sg1526 power supply
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T39 diode
Abstract: No abstract text available
Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,
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3b7254
IRFZ34/D
C65M2
IRFZ34
T39 diode
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FIFO 32x8
Abstract: 1553 bus controller
Text: WHITE / M IC R O E L E C T R O N IC S WA-A3XXX ATLAS 603e PERIPHERAL PROCESSOR MODULAR ADVANCED * FEATURES • 1553B Remote T e rm in a l/B u s C o n tro lle r Interfa ce C lock Frequencies: 25, 33, 40 M H z ■ 16 P rogram m able Chip S elects Packaging:
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447-pin
1553B
describ17
484-ball
FIFO 32x8
1553 bus controller
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PDF
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LS7503
Abstract: d 2923 LS7501 LS7502 LS7504 LS7505 LS7506 LS7507 LS7508 LS7510
Text: LSI/CSI TONE ACTIVATED LINE ISOLATION DEVICE FEATURES: • Low power CMOS design • On chip oscillator 32,768HZ external crystal required • Tone input can be low level sinusoid (as low as — 30 DBM) or fully digital. • Mask programmable available frequencies: 11 HZ to 4095
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768HZ
LS7501
LS7510
LS7501
LS7502
32KHz
LS7503
d 2923
LS7504
LS7505
LS7506
LS7507
LS7508
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PDF
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NE556 pin configuration
Abstract: CE100M NE556-1 equivalent NE556n pin configuration NE556-1 NE5561 ne556n equivalent ne556 ne 556 applications ne 556 timer
Text: Product specification Philips Semiconductors Linear Products Dual timer NE/SA/SE556/NE556-1 PIN CONFIGURATION DESCRIPTION Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable controllers capable of producing accurate time delays or oscillation. The 556 and 556-1 are a dual 555. Timing is provided by
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NE/SA/SE556/NE556-1
200mA.
NE556 pin configuration
CE100M
NE556-1 equivalent
NE556n pin configuration
NE556-1
NE5561
ne556n equivalent
ne556
ne 556 applications
ne 556 timer
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Untitled
Abstract: No abstract text available
Text: WHITE / M I C R O E L E C T R O N I C S W A-A1XXX ATLAS 68020/68040 PERIPHERAL PROCESSOR MODULAR ADVANCED* FEATURES • 6 8 0 2 0 and 68040 M ic ro p ro c e s s o r Interfaces ■ 1553B Remote Term inal Interfa ce ■ C lock Frequencies: 16, 20, 25 M H z 68020
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447-pin
1553B
484-ball
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PDF
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a39 zener diode
Abstract: No abstract text available
Text: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high
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MTP25IM06E
a39 zener diode
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PDF
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XSTR
Abstract: 221A-04 AN569 MTP20N10E mosfet transistor 400 volts.100 amperes
Text: MOTOROLA SC XSTRS/R F 14E D I b3t7aSM 0 0^ 030 0 7 I 7 ^ 3 7 - M O TO ROLA • SEMICONDUCTOR TECHNICAL DATA. M TP 20N 10E Designer's Data Sheet T M O S IV P o w e r F ie ld E f f e c t T r a n s is t o r T M O S P O W E R FET 20 A M P E R E S N-Channel Enhancem ent-M ode S ilic o n G ate
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21A-04
O-220AB
XSTR
221A-04
AN569
MTP20N10E
mosfet transistor 400 volts.100 amperes
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PDF
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IRPF 250 N transistor
Abstract: IRPF 250 N IRPF 260 N transistor IRPF 150 IRPF 250 MTP25N05E IRPF 221A-04 25CC a/IRPF 250 NO transistor
Text: MOTOROLA SC XSTRS/R IM E'D I F b3k?2S4 0CHÜ311 -T -Ò 9 -/3 , ‘ MO TO ROLA l | • SEM IC O N D U CTO R TECHNICAL DATA MTP25N05E D esigner's Data Sh eet T M O S IV P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilico n G ate T h is ad van ced " E " s e rie s o f T M O S p o w er M O S F E T s is d esig ned to w ith stan d high
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T-39-/Z
YI45M,
IRPF 250 N transistor
IRPF 250 N
IRPF 260 N transistor
IRPF 150
IRPF 250
MTP25N05E
IRPF
221A-04
25CC
a/IRPF 250 NO transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1238 MicroManager PIN ASSIGNMENT FEATURES • H o ld s m ic ro p ro c e s s o r in check d u rin g power lC 7 VBAT tra n s ie n ts ] RST vcco[ ] RST vcc[ ] WDS g n d [ ] CEI p f [ ] CEO • H alts and re s ta rts an o u t-o f-c o n tro l m ic ro p ro c e s s o r
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM6929/D SEMICONDUCTOR TECHNICAL DATA MCM6929 Product Preview 256K x 4 Bit Fast Static Random Access Memory The MCM6929 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silico n gate BiCMOS technology. Static design eliminates the need for external clocks
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MCM6929/D
MCM6929
MCM6929
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Untitled
Abstract: No abstract text available
Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current
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S29F040
040-90T
-120TC
-150TC
040-55L
040-70L
040-90L
040-150L
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