LS203 Search Results

lovoltech

Abstract: jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
Contextual Info: www.Lovoltech.com PWRLITE-LS203N High Performance N-Ch Vertical Power JFET Transistor “No Body Diode” transistor replaces 2 MOSFETs devices with 1 JFET Low Rdson to improve efficiencies Low drop-out for longer time operations per charge Very low leakage in off conditions

808 nm 100 mw

Abstract: PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm
Contextual Info: INFRARED LASER DIODE DL-LS2032 Tentative Ver.1 Jan. 2003 Package Features Tolerance : ± 0.2 Unit : mm ø5.6 - 0.03 ø4.4 • Lasing wavelength : 808 nm (Typ.) • Single longitudinal mode • High output power : 100 mW at 50°C • Low threshold current : Ith = 40 mA (Typ.)

LS2074

Abstract: iso 7816-2 7312 LS-207
Contextual Info: 4 5 8 8 SECTION 12 A-A .3 0.61 0.07 1 2.4 0.05 0.8 0.1 6 0.9 0.05 7312P0035A13LF 7 9 7 LEAD FREE CATALOGUE NUMBER A 6 SECTION A-A SCALE 10:1 A R0 3 2 0.6 0.05 1 10 3.94 11 2-0.1 2x 1.2 13 0.14 44.45 4 4.3 (1.8 ) 5 15 3 B 0.01 +0.1 2 20.32 B 14 21 20 DESCRIPTION

full wave controlled rectifier using RC triggering circuit

Abstract: 3M Electric Joint Compound SF1154 C702 diode dissipator C702 C702L C702LA C702LB C702LC
Contextual Info: High Power Silicon Controlled Rectifier C702 1000 A Avg. Up To 2400V AMF’ LI F Y l NG G A T E The General Electric C 702 Silicon Controlled R ectifier feature the new ly developed m ulti-diffusion tech n ology to com bine high blocking voltage cap­ ability with low on-state con d uction losses.

C601PN

Abstract: scotchbrite C701PN diodes C441 C702 C440 C440E C440M C701PM C440S
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

7431E022580

Abstract: 7431E0225S01LF VJW54076 VXX2760
Contextual Info: 4 PART NUMBER LEAD FREE VERSION 7 4 3 1E0 2 2 5 S 0 7 4 3 1 E0 2 2 5 S0 1LE c y/ jL u ¥ c \ =• A 5 5 . 9 +r GENERAL : LO X . 6X0 is I O - J In s u I a t o n r e s i s t a n <: e D i e l e c t r i c w i t h s ta ndi n g vo Cur e nt ca r r y ng ► X L + 0.3

C501

Abstract: C501N C501P C501PA C501PB C501PC C501PD C501PE C501S C501T
Contextual Info: SCR C501 550 A Avg. up to 1800 V AM PLIFYING GATE The C501 Series o f high power devices feature the proven, multi-diffused construction in a new, larger, pressure-mounted package. FEATURES: • • • • • • • Short Delay Time Pressure Contacts Glazed Ceramic Package w ith 1" Creepage Path

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

T305

Abstract: dissipator C795 C795CA C795CB C795CP C795LN C795LT SF1154
Contextual Info: C795 100mm THYRIST OR PRESSP THYRISTOR PRESSPA AK 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

Legrand switch

Abstract: Legrand VJW53665 ISO 1302 LS06-0206 LS2030 7312P iso 1101 02N05
Contextual Info: 0.8 3.6 6 7 2-0.1 2x 8 SECTION A-A SCALE 10:1 A 4.3 (1.2 ) 20.32 0.14 (1.8 ) 3.94 B 12.8 20 A 13.9 DESCRIPTION Connector especially designed for SMT technology EMV compatible and in accordance with ISO 7816-2 STOP CARD MECHANICAL Contacts force : between 0.2N-0.5N

FN 1016

Abstract: SCR 800V 50A C613 C613L C613PE C613PM C613PN C613PS C613PT RS-397
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 R M S C U R R E N T -A M P E R E S

alcoa electrical joint compound

Abstract: c180 scr C180PC C501 C180 C380 C380A C380B alcoa electrical joint compound #2 C380D
Contextual Info: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C

C701

Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
Contextual Info: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

alcoa electrical joint compound

Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: C795 100mm THYRIST AK OR PRESSP PRESSPA THYRISTOR 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

LS2038

Abstract: VJW53664
Contextual Info: 4 5 37 34 35 2-0.1 2x 4.3 0.14 44.45 26 B 20 A 38 36 1.2 39 20.32 32 30 (1.8 ) 10.2 0.1 6 .3 SECTION A-A SCALE 10:1 3.94 27 8 0.01 +0.1 0.8 0.1 7 33 0.9 0.05 0.61 0.07 28 A 31 0.6 0.05 29 6 R0 3 2 2.4 0.05 1 7312P002XA13LF 14.7 0.1 8 9 A B 40 Durability

alcoa electrical joint compound

Abstract: ge 142 GE-SPCO presspak C792 C792EE C792EM C792EN C792ES C792ET
Contextual Info: SbE D- E CO-. STATIC PUR CUPNT G g - S P C • 3Ô74SÔ4 DQGOObS fl ■ ~r~25~2-l C792 lOOmm THYRISTOR PRESSPAK 6000V12100A Q The GE type C792 thyristor is suitable forphase control applications such as forHVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second

SF1154

Abstract: ge 142 G322L 12116 C793CM C793 C793CE C793CN C793CS C793CT
Contextual Info: E CO-. S T A T I C PUR GE-SPCO CMPNT 2bE D I 30745Ô4 QQOQQb'ì S WÊ C793 T-25-ZI lOOmm THYRISTOR PRESSPAK 4000V /3400A The GE type C793 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second

BURROUGHS nixie

Abstract: SK-111-V BURROUGHS Burroughs Corporation ls203 nixi B9012 ScansUX851 SK-111H
Contextual Info: BULLETIN NO. 1034A September 1,1963 READOUT DEVICES NUMERICAL INDICATOR Type B -9012 P IX IE P o s itio n In d ic a to r T u b e The B-9012 is a gas-filled, cold cathode, indicator tube. It contains ten glow positions or cathodes located 36° apart which

Dow Corning 735

Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

SF1154

Abstract: DC550 alcoa electrical joint compound LS2037 dow corning 732 dissipator presspak C770 C770A Alcoa
Contextual Info: INVERTER THYRISTOR C770 & C770A SPCO 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate

SF1154

Abstract: dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U
Contextual Info: INVERTER THYRISTO R C770 & C770A 77mm / 1800V / 60-80us Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.It is supplied in an industry accepted disc-type package , ready to mount using

SF1154

Abstract: SF-1154
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.