LPP3 Search Results

EL5127

Abstract: EL5127CY EL5127CY-T13 EL5127CY-T7 EL5227 EL5227CL EL5227CL-T7 EL5327 EL5427
Contextual Info: EL5127, EL5227, EL5327, EL5427 Data Sheet 2.5MHz 4, 8, 10 & 12 Channel Rail-to-Rail Buffers The EL5127, EL5227, EL5327, and EL5427 are low power, high voltage rail-to-rail input/output buffers designed for use in reference voltage buffering applications

EL5224

Abstract: EL5224IL EL5224IL-T13 EL5224IL-T7 EL5224IRE EL5224IRE-T7 EL5324 EL5424
Contextual Info: EL5224, EL5324, EL5424 Data Sheet 12MHz Rail-to-Rail Buffers + 100mA VCOM Amplifier The EL5224, EL5324, and EL5424 feature 8, 10, and 12 low power buffers, respectively, and one high power output amplifier. They are designed primarily for buffering column driver reference voltages in TFT-LCD

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

M28F020-20

Abstract: MD28F020-20/B
Contextual Info: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum

Contextual Info: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: July 2002 DS90CP04 4x4 Low Power 2.5 Gb/s LVDS Digital Cross-Point Switch General Description Features DS90CP04 is a 4x4 digital cross-point switch with broadside input and output pins for efficient board layout. It utilizes Low Voltage Differential Swing LVDS technology for low power,

28F512

Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Contextual Info: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

programming 89C52

Abstract: 89c54 ET EQUIVALENT 89c52 pin diagram microcontroller 89c52 pin diagram 89C52 89C54 P89C52NBAA 80C51 P89C54NBAA
Contextual Info: Philips Sem iconductors Prelim inary specification CM O S single-chip 8-bit m icrocontrollers with FLASH program m em ory DESCRIPTION a a n x o ia a n x A LOGIC SYMBOL The 89C 52/89C54 are Single-Chip 8-Bit M icrocontrollers m anufactured in advanced CM OS process and are derivatives of

intel 28F256

Abstract: CAT28F256 intel 28F256 flash 28F256 intel 28F256 dip 28F256 CMOS FLASH
Contextual Info: LV S T P re lim in a ry CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

d29 08

Abstract: DS90CP04 DS90CP04-TBD DAP 011
Contextual Info: February 2002 DS90CP04 4x4 Low Power 2.5 Gb/s LVDS Digital Cross-Point Switch General Description Features DS90CP04 is a 4x4 digital cross-point switch with broadside input and output pins for efficient board layout. It utilizes Low Voltage Differential Swing LVDS technology for low power,

28F010N

Abstract: 28F01090 1N914 28F010-12 CAT28F010
Contextual Info: C lA T CAT2 8 F010 A 1 _ Y s ~ r licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Temperature Ranges ■ Fast Read Access Time: 70/90/120 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

SSC16E

Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program

DS90CP04

Abstract: DS90CP04TLQ DS90CP04TLQX 30-bit
Contextual Info: DS90CP04 4x4 Low Power 2.5 Gb/s LVDS Digital Cross-Point Switch General Description Features DS90CP04 is a 4x4 digital cross-point switch with broadside input and output pins for efficient board layout. It utilizes Low Voltage Differential Swing LVDS technology for low power,

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

DS90CP04

Abstract: DS90CP04TLQ DS90CP04TLQX
Contextual Info: September 2002 DS90CP04 4x4 Low Power 2.5 Gb/s LVDS Digital Cross-Point Switch General Description Features DS90CP04 is a 4x4 digital cross-point switch with broadside input and output pins for efficient board layout. It utilizes Low Voltage Differential Swing LVDS technology for low power,

ISSI 726

Abstract: PLCC 32 socket layout IS28F020-55TI IS28F020-50PLI
Contextual Info: 262,144 X 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maxirnum access tim e • CMOS low power consumption - 30 mA maximum active current -1 0 0 fiA maximum standby current • Compatible with JEDEC-standard byte-wide pinouts - 32-pin DIP

Contextual Info: DS90CP04 DS90CP04 1.5 Gbps 4x4 LVDS Crosspoint Switch Literature Number: SNLS154H DS90CP04 1.5 Gbps 4x4 LVDS Crosspoint Switch General Description Features DS90CP04 is a 4x4 digital cross-point switch with broadside input and output pins for efficient board layout. It utilizes Low

EL6295CJ

Abstract: OPTICAL PICK-UP
Contextual Info: . EL6265C C fg ffltC C HiSHPERFORMANCEANALOGfSTEW ATEOCIRCUITS iS « 13-Ch, 60MHz, Switched Gain J^re-Amp M r . ON . K ON in n Features General Description • Autozero of output offset to <10mV • 13 channels with three selectable gains of 12kQ, 23k£2, and 63ki2

28F512

Abstract: 32-PIN 80C186 A28F512
Contextual Info: in te i 512K 64K X A28F512 8 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to + 125X Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 1 Second Chip-Program

AP28F512-120

Contextual Info: A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Automotive Temperature Range: -4 0 °C to +125°C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program

RBS 2102

Abstract: 80C51 89C536 89C538 P89C536NBA P89C536NBB P89C538NBA P89C538NBB 89C53 AQRS
Contextual Info: Philips Sem iconductors Prelim inary specification CMOS single-chip 8-bit microcontrollers with FLASH program memory DESCRIPTION a q r^ fi/a Q P 1 ayoajb/syu& ja LOGIC SYMBOL The 89C536/89C538 are Single-Chip 8-Bit Microcontrollers m anufactured in advanced CM OS process and are derivatives of

PH1137

Abstract: DSRC BR 8550 D RF 300CH ILC32 br 8550 c ir43 IR45 ir58 IR62
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

RBS 2102

Abstract: 80C51 89C536 89C538 P89C536NBA P89C536NBB P89C538NBA P89C538NBB
Contextual Info: Philips Sem iconductors Prelim inary specification CMOS single-chip 8-bit microcontrollers with FLASH program memory DESCRIPTION FEATURES The 89C536/89C538 are Single-Chip 8-Bit Microcontrollers m anufactured in advanced CM OS process and are derivatives of