LP SDRAM SOLUTION Search Results

ddr 3 tsop

Abstract: TSOP 56 LAYOUT TSOP 66 Package
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

udqs

Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: The 512 Megabit LP-Stack modules DPDD32MX16WSCY5, based on 256 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 16 DDR SDRAM TSOP monolithic. This allows for

Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBY5 DESCRIPTION: The 512 Megabit LP-StackTM module DPDD64MX8WSBY5, based on 256 Mbit devices, has been designed to fit the same footprint as the 32 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for

TSOP 56 LAYOUT

Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

ipc 502

Abstract: DPSD64ME8WKY5
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous SDRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

DPSD32ME8TKY5

Abstract: SD32M
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

DPSD128MX4WNY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

30A215-01

Abstract: DP 6 W
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

LP SDRAM solution

Abstract: LP2995
Contextual Info: National News LP2995 February 2002 www.national.com/pf/LP/LP2995.html Introducing the World’s Smallest DDR SDRAM Termination Regulator Typical Application Circuit LP2995 VDDQ = 2.5V VDDQ VREF VDD = 2.5V AVIN VSENSE PVIN VTT 22 µF + GND + VREF = 1.25V VTT = 1.25V

Dense-Pac Microsystems

Abstract: Megabit SDRAM Drawing
Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and

sdram 4 bank 4096 16

Abstract: SDRAM Drawing
Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and

TSOP 66 Package

Abstract: sdram 4 bank 4096 16
Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD128MX4WSAY5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP

ddr pin out

Abstract: Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16
Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The

DPSD8MX32TY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP

Contextual Info: DENSE-PAC 512 Megabit CMOS DDR SDRAM DPDD128MX4WSÄY5 MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The256M egabit Double Data Rale Synchronous DRAM isam em ber o fth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The

Contextual Info: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

DPSD128ME8XKY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous DRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8