vhdl code for fifo and transmitter
Abstract: No abstract text available
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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Untitled
Abstract: No abstract text available
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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IO191
Abstract: vhdl code for fifo and transmitter actel FG484 package mechanical drawing
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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DUAL-PORT STATIC RAM
Abstract: IC transistor linear handbook
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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RT3PE3000
Abstract: A3P60 eeprom programmer schematic design TDP 246 fips A500K270
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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A3P3000
Abstract: HEADER-CONVERTER
Text: ProASIC 3L Low-Power Handbook ProASIC3L Low-Power Flash Device Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – ProASICL Low-Power Datasheet
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tlo34
Abstract: tl031 equivalent ic
Text: TL03x, TL03XA, TL03xY ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOSI 8O- FEBRUARY 1997 Direct Upgrades for the TL06x Low-Power BiFETs • Higher Slew Rate And Bandwidth Without Increased Power Consumption Low Power Consumption 6.5 mW/Channel Typ
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OCR Scan
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TL03x,
TL03XA,
TL03xY
TL06x
TL031A)
TL03x
TL031
tlo34
tl031 equivalent ic
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Untitled
Abstract: No abstract text available
Text: SG2011 300mA, Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION The SG2011 low-power, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage, low power applications. An ultra low ground
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SG2011
300mA,
SG2011
300mA.
210mV
300mA
300mA
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Untitled
Abstract: No abstract text available
Text: 2SK2259-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK2259-01MR
O-220F15
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2SK1822-01MR
Abstract: 2sk1822
Text: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK1822-01MR
O-220F15
SC-67
2SK1822-01MR
2sk1822
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2SK2259-01MR
Abstract: No abstract text available
Text: 2SK2259-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK2259-01MR
O-220F15
2SK2259-01MR
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M5010
Abstract: No abstract text available
Text: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK1822-01MR
O-220F15
SC-67
M5010
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2SK1969-01
Abstract: 2SK1969
Text: 2SK1969-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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2SK1969-01
SC-65
2SK1969-01
2SK1969
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30V 20A power p MOSFET
Abstract: 2SK2165-01 SC-65
Text: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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2SK2165-01
SC-65
30V 20A power p MOSFET
2SK2165-01
SC-65
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Y525
Abstract: Y528 BZM55B5V6 SGM2005 DFN-6
Text: SGM2005 Low Power, Low Dropout, 150mA, RF - Linear Regulators GENERAL DESCRIPTION The SGM2005 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. They are the perfect choice for low voltage, low power applications. An ultra
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SGM2005
150mA,
SGM2005
150mA.
100kHz)
150mA
150mV
Y525
Y528
BZM55B5V6
DFN-6
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BZM55B5V6
Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 250mA. They are the perfect choice for low voltage, low power applications.
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SGM2014
250mA,
SGM2014
250mA.
current160
250mA
250mV
BZM55B5V6
sg sot23
marking 1F 6 pin
Zener diode sot23-5
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Untitled
Abstract: No abstract text available
Text: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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Original
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2SK2165-01
SC-65
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2SK1969
Abstract: 2SK1969-01 M6020 SC-65 300VDS
Text: 2SK1969-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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2SK1969-01
SC-65
2SK1969
2SK1969-01
M6020
SC-65
300VDS
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SG2010
Abstract: XA28
Text: SG2010 150mA, Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SG2010 low-power, low-dropout, CMOS linear voltage regulator operates from 2.5V to 5.5V input and delivers up to 150mA. It is the perfect choice for low voltage, low power applications. An ultra low ground current 100µA
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SG2010
150mA,
SG2010
150mA.
150mA
105mV
XA28
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ProASIC3
Abstract: yc 409
Text: Advanced v0.1 IGLOOTMe Low-Power Flash FPGAs with Flash*FreezeTM Technology Features and Benefits Low Power • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation from 25 µW
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130-nm,
128-Bit
ProASIC3
yc 409
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Untitled
Abstract: No abstract text available
Text: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZ30-2
HZ20-2
HZ16-2
HZ12B2
HZ24-2
HZ36-2
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diode HZS2A1
Abstract: HZS4A1 HZS4B2 HZS5B2 HZS5C3 ZENER HZS6C2 HZS11A1 HZS11A2 HZS11A3 HZS11B1
Text: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Max. 0.45 Features Min. 27.5 Max. 1.9 • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for Black Cathode Band stabilized power supply, etc.
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DO-34
HZS36-2
diode HZS2A1
HZS4A1
HZS4B2
HZS5B2
HZS5C3
ZENER HZS6C2
HZS11A1
HZS11A2
HZS11A3
HZS11B1
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HZS3C3
Abstract: HZS3A1 HZS7A1 HZS5B2 HZS7A3 HZS11A1 HZS11A2 HZS11B1 HZS11B2 HZS11C1
Text: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZS36-2
HZS3C3
HZS3A1
HZS7A1
HZS5B2
HZS7A3
HZS11A1
HZS11A2
HZS11B1
HZS11B2
HZS11C1
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HZ7C1
Abstract: hz15 HZ11A1 HZ11A2 HZ11A3 HZ11B1 HZ11B2 HZ11B3 HZ11C1 HZ11C2
Text: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZ12B2
HZ24-2
HZ36-2
HZ7C1
hz15
HZ11A1
HZ11A2
HZ11A3
HZ11B1
HZ11B2
HZ11B3
HZ11C1
HZ11C2
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