Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LOW POWER RF TRANSISTOR Search Results

    LOW POWER RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW POWER RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC 2501

    Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features


    Original     		2SC4536 2SC4536 OT-89) PU10338EJ01V0DS NEC 2501 2SC4536-T1 ic nec 2501 2501 NEC nec RF package SOT89 qs marking sot-89 PDF

    2SC4703-T1

    Abstract: NE46234 2SC4703 2SC470-3
    Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage


    Original     		NE46234 2SC4703 2SC4703 OT-89) dBV/75 PU10339EJ01V1DS 2SC4703-T1 2SC470-3 PDF

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology PDF

    ic nec 2501

    Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		2SC4703 2SC4703 OT-89) PU10339EJ01V0DS ic nec 2501 nec 2501 2501 NEC 2SC4703-T1 2SC470-3 nec RF package SOT89 PDF

    nec 2501

    Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		2SC4703 2SC4703 OT-89) PU10339EJ01V1DS nec 2501 ic nec 2501 nec RF package SOT89 2501 NEC 2SC4703-T1 2SC470-3 PDF

    Intermediate frequency transformer 455khZ

    Abstract: NE602 application note NE602 philips double conversion narrow band FM receiver 10.7Mhz 15Khz crystal filter SA602 NE602 equivalent 10.7MHz, shielded IF transformer SA602 Double Balanced Mixer and Oscillator if transformer 455khz
    Text: RF COMMUNICATIONS PRODUCTS AN1993 High sensitivity applications of low-power RF/IF integrated circuits 1997 Aug 20 Philips Semiconductors Philips Semiconductors Application note High sensitivity applications of low-power RF/IF integrated circuits AN1993 ABSTRACT


    Original     		AN1993 455kHz SA604A SA602 AN1982 Intermediate frequency transformer 455khZ NE602 application note NE602 philips double conversion narrow band FM receiver 10.7Mhz 15Khz crystal filter NE602 equivalent 10.7MHz, shielded IF transformer SA602 Double Balanced Mixer and Oscillator if transformer 455khz PDF

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications PDF

    1000w power amplifier circuit diagram

    Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
    Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply


    Original     		APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram PDF

    nec 2501

    Abstract: NESG240034 ic nec 2501 2501 nec
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG240034 NESG240034 NESG240034-A M8E0904E nec 2501 ic nec 2501 2501 nec PDF

    nec 2501

    Abstract: ic nec 2501 2501 NEC NESG220034
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG220034 NESG220034 NESG220034-A M8E0904E nec 2501 ic nec 2501 2501 NEC PDF

    800w power amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
    Text: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager


    Original     		APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques" PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		NESG2101M16 NESG2101M16 PU10395EJ03V0DS PDF

    transistor T1J

    Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING PDF

    NESG2101M16

    Abstract: NESG2101M16-T3 NESG2101M16-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF492 MRF492A | The RF Line 70 W 60 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR (-•—.— » . . . designed for 1 2.5 volt low band VHP large-signal power amplifier


    Original     		MRF492 MRF492A PDF

    120R2

    Abstract: No abstract text available
    Text: RF5187 RF5187Low Power Linear Amplifier LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features „ Single 3V to 6V Supply 10dBm to 20dBm Ultra Linear Output Power RF IN 1 8 RF OUT „ 14dB Gain at 2.14GHz RF IN 2 7 RF OUT


    Original     		RF5187Low RF5187 10dBm 20dBm 14GHz 800MHz 2500MHz RF5187 120R2 PDF

    BLH*3355

    Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
    Text: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure


    Original     		BLH3355 BLH3355) BLH*3355 BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5187 RF5187Low Power Linear Amplifier LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features „ Single 3V to 6V Supply 10dBm to 20dBm Ultra Linear Output Power RF IN 1 8 RF OUT „ 14dB Gain at 2.14GHz RF IN 2 7 RF OUT


    Original     		RF5187Low RF5187 10dBm 20dBm 14GHz 800MHz 2500MHz RF5187 PDF

    NESG2101M16

    Abstract: NESG2101M16-T3
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		NESG2101M16 NESG2101M16 NESG2101M16-T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		NESG2101M16 NESG2101M16 M8E0904E PDF

    IN5106

    Abstract: No abstract text available
    Text: DRAFT RF2192 DRAFT RF21923V 900MHz Linear Power Amplifier 3V 900MHz LINEAR POWER AMPLIFIER „ Low Power Mode „ 45 mA idle current „ „ „ „ „ RF OUT GND 3 11 RF OUT RF IN 4 10 RF OUT „ Portable Battery-Powered Equipment 5 6 7 8 9 Functional Block Diagram


    Original     		RF21923V 900MHz RF2192 16-Pin, 29dBm 31dBm CDMA2000 450MHz RF219routing IN5106 PDF

    56590653B

    Abstract: BH Rf transistor
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		56-590-65/3B MRF492 56590653B BH Rf transistor PDF

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


    OCR Scan     		MRF581 transistor 81 110 w 63 PDF

    HP8542

    Abstract: HP11590B transistor nf5 F581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz


    OCR Scan     		F5812 MRF581 MRF5812 HP8542 HP11590B transistor nf5 F581 PDF