LOW NOISE TRANSISTOR CROSS Search Results

telefun

Abstract: transistor Bf 979 BF979
Contextual Info: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking

Contextual Info: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.

Stackpole ferrite

Abstract: 2H5943 kc 0711
Contextual Info: 2H5943 1 NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low cross-modulation distortion and low-noise figure. Characterized for use in CATV applications. e Low Noise Figure– @f = 200 MHz r 1— A+ STYLE

BF979

Contextual Info: BF979 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation

BF979

Abstract: Telefunken telefunken transistor
Contextual Info: BF979 Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 94 9308 1 BF979 Marking: BF979 Plastic case TO 50

KSC900

Abstract: transistor 5d
Contextual Info: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

KSC900

Contextual Info: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage VCBO=30V • Low Noise Level NL=50mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSC1222

Contextual Info: KSC1222 KSC1222 Low Frequency Low Noise Amplifier • Collector-Base Voltage : VCBO=50V • Low Noise Level : NL=40mV MAX. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

FPD1500DFN

Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

2N3906 PNP bipolar junction transistor

Abstract: ST 2n3904 TRANSISTOR PNP Microphone Preamplifiers antilog amplifier "Microphone Preamplifiers" "PNP Transistor array" pnp 8 transistor array pin configuration NPN transistor 2N3904 npn-pnp-transistors 2N3904
Contextual Info: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Microphone Preamplifiers · · Tape Head Preamplifiers Monolithic Construction · · Current Sources Low Noise

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage: VCBO=50V • Low Noise Level: NL=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage

Contextual Info: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —

THAT380G

Abstract: pnp 8 transistor array
Contextual Info: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors

Contextual Info: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS „ 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers „ Monolithic Construction • Current Sources „ Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

BF579

Abstract: BF579R
Contextual Info: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1

free transistor

Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Contextual Info: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency

KSC900-L

Contextual Info: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC900

Contextual Info: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSC900

Contextual Info: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor