000068H
Abstract: No abstract text available
Text: RapidIO Logical I/O and Transport Layer Interface DS242 (v1.3.1) July 31, 2003 Introduction Product Specification LogiCORE Facts The Xilinx LogiCORE RapidIO™ Logical (I/O) and Transport Layer interface is optimized for Virtex™-II and Virtex-II Pro™ series FPGAs
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DS242
000068H
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timing DIAGRAM OF ROM
Abstract: EEPROM ROM80 c5 rom Shanghai Belling D103 diagram of rom chip
Text: BL7431A 256-Bit EEPROM Logical Encrypted Chip Description Pin Diagram BL7431A is the memory card chip developed by Shanghai Belling Co.,Ltd. The chip uses Shanghai Belling’s 1.2um CMOS & EEPROM process. It has 256 bits EEPROM A type or 512 bits EEPROM(B type) with logical
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BL7431A
256-Bit
timing DIAGRAM OF ROM
EEPROM
ROM80
c5 rom
Shanghai Belling
D103
diagram of rom chip
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0123F POWER SUPPLY
Abstract: 0880E 0830B mcu 08300 0080D 0847f fcbg AA23 AC25 IDT7172604
Text: IDT88K8483 SPI-4 Exchange Document Issue 1.0 Description Features Functionality – Multiplexes logical ports LPs from SPI-4A and SPI-4B to SPI4M – Optionally converts between interleaved packet transfers and whole packet transfers per logical port – Data redirection per LP between SPI-4A, SPI-4B and 10G
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IDT88K8483
IDT88K8483BRI
IDT88K8483
IDT88K8483BLI
IDT88K8484
0123F POWER SUPPLY
0880E
0830B
mcu 08300
0080D
0847f
fcbg
AA23
AC25
IDT7172604
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entrelec diode
Abstract: Diode BFM diode 4007 DATASHEET din 4007 in 4007 diode 1SNA010134R1700 1SNA020021R1300 diode N 4007 diode 4007 diode in 4007
Text: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners . 15.1 - 15.8 Series 10 000. 15.2
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cd40109
Abstract: CD40109BMS IOH15
Text: CD40109BMS CMOS Quad Low-to-High Voltage Level Shifter December 1992 Features Description • High Voltage Type 20V Rating CD40109BMS contains four low-to-high voltage level shifting circuits. Each circuit will shift a low voltage digital logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS
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CD40109BMS
CD40109BMS
cd40109
IOH15
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CD40109BMS
Abstract: IOH15
Text: CD40109BMS CMOS Quad Low-to-High Voltage Level Shifter December 1992 Features Description • High Voltage Type 20V Rating CD40109BMS contains four low-to-high voltage level shifting circuits. Each circuit will shift a low voltage digital logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS
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CD40109BMS
CD40109BMS
IOH15
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sandisk flash controller
Abstract: sandisk sd card geometry toshiba NAND Flash memory controller ecc SANDISK SDHC ULTRA SANDISK SDHC ULTRA class 6 TOSHIBA nand "numbering" flash sandisk SD sandisk 8gb sd card geometry "sd card" 2GB sandisk Nand flash part number
Text: EYE 09 September 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 170 CONTENTS New Products NAND Flash Memory with Logical Address Access Method: LBA-NANDTM.2 Ultra High Speed SD Memory Cards. 2
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32-bit
300mm
sandisk flash controller
sandisk sd card geometry
toshiba NAND Flash memory controller ecc
SANDISK SDHC ULTRA
SANDISK SDHC ULTRA class 6
TOSHIBA nand "numbering" flash
sandisk SD
sandisk 8gb sd card geometry
"sd card" 2GB
sandisk Nand flash part number
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Untitled
Abstract: No abstract text available
Text: IMAGE UNAVAILABLE TOOMt.17 D323034 5T4 ELECTRICAL CHARACTERISTICS See Notes 1 & 2 CTS 0034CB Parameter Logical " 1 " Conditions Min Typ Max Units V 2.0 v cc = 4 -5V In p u t Voltage Logical " 0 " V 0.8 V c c = 5 -5V In p u t Voltage Logical " 1 " AiA 40
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D323034
0034CB
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tc5020bp
Abstract: No abstract text available
Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
DIF16-P-300A)
500kHz
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TC5020BP
Abstract: No abstract text available
Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOU-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
CHARAC600
500kHz
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Untitled
Abstract: No abstract text available
Text: TC5020BP C’MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5020BP HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
500kHz
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TC5020BP
Abstract: No abstract text available
Text: TC5020BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC502 0 B P HEX LOU-TO-HIGH VOLTAGE T R A N S L A T O R INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC502
TC5020BP
500kHz
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TC5020BP
Abstract: No abstract text available
Text: C ’M O S TC5020BP TC5020BP D IG ITA L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
Sup30
500kHz
/907o
102-Vss
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TC5020BP
Abstract: TC5020
Text: C ’M O S TC5020BP D IG ITA L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC TC5020BP HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
500kHz
/907o
102-Vss
TC5020
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TC5316210
Abstract: Tc5316210cf
Text: TC5316210CP/CF TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.
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TC5316210CP/CF
TC5316210CP/CF
216-bit
42-pin
44-pin
765TYP
TC5316210
Tc5316210cf
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Untitled
Abstract: No abstract text available
Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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145156
Abstract: No abstract text available
Text: M O TO R O LA 4-BIT TRANSPARENT LATCH/4-T0-16 LINE DECODER The MC14514B and M C 145156 are two output options of a 4 to 16 line decoder with latched inputs. The MC14514B output active high option presents a logical " 1 " at the selected output, whereas the MC14515B (output active low option) presents a logical " 0 " at
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LATCH/4-T0-16
MC14514B
MC14514B
MC14515B
145156
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TC534200CF
Abstract: No abstract text available
Text: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.
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TC534200CP/CF/CFT
BITS/512
TC534200CP/TC534200CF
304-bit
TC534200CP/CF
40-pin
44-pin
TC534200CF
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TC5332200AF
Abstract: TC53322
Text: TO SH IB A TC5332200AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 2,097,152 WORD BY 16 BITS/4,194,304 WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC53322Ö0AF/AFT is a 33,554,432-bit Read Only Memory organized as 2,097,152 words by 16 bits when BYTE is logical high, and as 4,194,304 words by 8 bits when BYTE is logical low.
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TC5332200AF/AFT
TC53322
432-bit
TC5332200AF/AFT
44-pin
765TYP
TC5332200AF
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A10AL
Abstract: TC538200AFT
Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.
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TC538200AP/AF/AFT
TC538200AP/AF
608-bit
42-pin
44-pin
OP44--
A10AL
TC538200AFT
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TC5316200CP
Abstract: TC5316200CF
Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.
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TC5316200CP/CF/CFT
TC5316200CP/CF/CFT
216-bit
42-pin
44-pin
TC5316200CP
TC5316200CF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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CD40109
Abstract: RCA-CD40109 CD40109B DG37 15-V CD40103B M3025
Text: HA RR IS S E M I C O N » S E C T O R MME D • 4302571 QQ37714 T d 3 H A R R IS B i HAS - 'd 'Z 'K C D 40109B Types CMOS Quad Low-to-High Voltage Level Shifter Features: In p u t signal A , B, G, 0 w ith logical 1 = V c c and logical 0 = V$S to a hlgher-voltage o u t
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M302571
00377m
CD40109B
20-Volt
RCA-CD40109,
9ZCS-36697
CD4Q1Q98H.
CD40109
RCA-CD40109
DG37
15-V
CD40103B
M3025
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICS VCR M52366FP VHS SYSTEM VCR COLOR SIGNAL PROCESSING DESCRIPTION The M52366FP is a semiconductor integrated circuit equipped with all facilities for NTSC VHS method color signal recording/playback processing. It consists of a playback logical comb filter and a
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M52366FP
M52366FP
800mVp-p
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