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    LOGIC LEVEL MOSFET Search Results

    LOGIC LEVEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd

    LOGIC LEVEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


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    3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530 PDF

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


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    RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15 PDF

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


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    RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors PDF

    2N6901

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


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    2N6901 O-205AF) 2N6901 PDF

    Untitled

    Abstract: No abstract text available
    Text: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device


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    SNN01Z10D SNN01Z10 O-252 01Z10 17-JAN-12 KSD-T6O039-000 PDF

    RFL2N05L

    Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
    Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■


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    RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520 PDF

    BUK110-50GL

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


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    BUK110-50GL BUK110-50GL OT404 PDF

    mosfet fq transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


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    BUK107-50DS BUK107-50DS ie-05 mosfet fq transistor PDF

    C5052

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


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    BUK107-50DS 1E-07 1E-05 1E-03 C5052 PDF

    iec60134

    Abstract: JESD22-A108C JESD22-A108-C JESD22A108C AN10721 JESD22 JESD22*108 A/IEC60134
    Text: AN10721 Logic level VGS ratings for NXP power MOSFETs Rev. 01 — 18 July 2008 Application note Document information Info Content Keywords gate–source voltage, logic level, rating Abstract Explanation of the link between the absolute maximum rating of gate–source voltage VGS for a logic level power MOSFET, the design


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    AN10721 AN10721 iec60134 JESD22-A108C JESD22-A108-C JESD22A108C JESD22 JESD22*108 A/IEC60134 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK100-50GL iSL25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET_ _ DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


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    BUK108-50DL BUK108-50DL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-500L Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


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    BUK110-500L BUK110-50DL PDF

    C5024

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK102-50GL C5024 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK100-50GL BUK100-50GL PDF

    BUK1D1-50GL

    Abstract: 8UK101-50GL
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK101-50GL Fig-23. BUK1D1-50GL 8UK101-50GL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK100-50DL BUK100-50DL PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan
    BUK102-50DL BUK102-50DL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


    OCR Scan
    BUK100-50GL BUK100-50GL PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK102-50GL BUK102-50GL PDF

    IRLF130

    Abstract: SS452 mosfet b44 diode b44
    Text: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed


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    IRLF130 O-205AF SS452 D021HSQ IRLF130 00S1451 mosfet b44 diode b44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


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    BUK110-50GL isl25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK109-5OGL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


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    BUK109-5OGL PDF

    0n06

    Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
    Text: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic


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    0N06L RFP30N06LE, RF1S30N06LESM 0n06 mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE PDF