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    MOSFET N-Channel 1a vgs 1.2v sot-23

    Abstract: LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape& LN2502LT3G 10000/Tape& 300us, OT-23 MOSFET N-Channel 1a vgs 1.2v sot-23 LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G S-LN2502LT1G 236AB) AEC-Q101 LN2502LT3G S-LN2502LT3G 3000/Tape& 10000/Tape&