Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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Original
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PDF
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LN2502LT1G
236AB)
3000/Tape
10000/Tape
300us,
OT-23
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MOSFET N-Channel 1a vgs 1.2v sot-23
Abstract: LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
|
Original
|
PDF
|
LN2502LT1G
236AB)
3000/Tape&
LN2502LT3G
10000/Tape&
300us,
OT-23
MOSFET N-Channel 1a vgs 1.2v sot-23
LN2502LT1G
sot-23 Marking N25
6A MARKING
marking diode 6a
ln2502
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
|
Original
|
PDF
|
LN2502LT1G
S-LN2502LT1G
236AB)
AEC-Q101
LN2502LT3G
S-LN2502LT3G
3000/Tape&
10000/Tape&
|