MIL-C-26655
Abstract: ADC1111 MIL-I-46058 MIL-S-23586 26655B
Text: A OBS OLE TE SVM. A DR. DESCRIPTION APPD. DATE INITIAL RELEASEPER E.R. NO. OBS -' CKD. OLE . TE REVSTATuslllllllllllll1 1 OF SHEETS 1112131"151617181911011111211311"1 UNLESS OTHERWISE SPECIFIED DRAWN 51 DATE DIMENSIONSARE IN INCHES TOLERANCES: DECIMALS: .XX !
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ADC1111
ADCll11
MIL-C-26655
MIL-I-46058
MIL-S-23586
26655B
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Untitled
Abstract: No abstract text available
Text: jjl ra fl Sem iconductor p r e l im in a r y LM168/LM268/LM368 Precision Voltage Reference General Description Features The LM168/LM368 are precision, monolithic, temperatureccmpensated voltage references. The LM168 makes use of thn-film technology enhanced by the discrete laser trimmng of resistors to achieve excellent Temperature coeffi
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LM168/LM268/LM368
LM168/LM368
LM168
694-3-R-10K-A)
T-914-10K-100-05)
LM168/LM268/LM368
LM3M-10
7VH/5522-14
TU/H/5522-13
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LM365
Abstract: ADC0841CCN STB14NM50N ADC0841 ADC0841BCJ ADC0841BCN ADC0841BCV ADC0841BJ ADC0841CCJ ADC0841CCV
Text: ADC0841 National Ü2MSemiconductor ADC0841 8-Bit jaP Compatible A /D Converter General Description Features The ADC0841 is a CMOS 8-bit successive approximation A /D converter. Differential inputs provide low frequency in put common mode rejection and allow offsetting the analog
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ADC0841
ADC0841BCN
ADC0841CCN
ADC0841BCJ
ADC0841CCJ
ADC0841BCV
ADC0841CCV
ADC0841BJ
ADC0841CJ
LM365
STB14NM50N
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calibration procedure for 473 thermocouple
Abstract: LM28S D7445
Text: LM185-1.2/LM285-1.2/LM385-1.2 5ÔE J> b501124 0074H55 044 « N S C S NATL SEMICOND LINEAR National Semiconductor L M 1 8 5 -1 .2 /L M 2 8 5 - 1 .2 /L M 3 8 5 - 1.2 M ic r o p o w e r V o lta g e R e fe r e n c e D io d e General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower
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DQ74455
LM185-1
2/LM285-1
2/LM385-1
bSG1124
calibration procedure for 473 thermocouple
LM28S
D7445
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lm38s
Abstract: No abstract text available
Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. Distinguishing Features No Video Amplifier Required ±1/4 LSB Typical DL Error
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24-pin
28-pin
Bt251,
Bt253
Bt261
Bt208
Bt208_
BC208KP
Bt208KPJ
lm38s
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LM38SM-1
Abstract: LM385 lm38sm LM28S LM2851 lm385 N LM185 LM285 LM385-1 slma
Text: 445 - LM 185-1.2, L M 2 8 5 -1 .2, LM 385-1.2 F U *7 b , Í I Í ^ 2 1 .2 3 5 V ± l% !o r ± 2 % — 55— h 1 2 5 °C * 3tm J E 0 S& + 1 .2 v ) , L M 2 8 5 -1.2 ( i F ) T '. t 1* £ . - 4 0 ^ + 8 5 r íi L M 1 8 5 - 1 .2 30m A 10m A - 5 5 - + 125C (L M 1 8 5 -1 .2 )
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lm185-1
lm285-1
lm385-1
LM285
EIffl--10/iA
30ppm/'
20ppm/1000Hr
LM38SM-1
LM385
lm38sm
LM28S
LM2851
lm385 N
LM185
slma
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ax 3003
Abstract: 1N3064 MIL-M-38510/115
Text: MI L - M- 3 8 5 1 0/ 4 4 8 28 February 1984 SUPERSEDING MÏ L - M- 38510/ 44A 24 May 1982 QUALIFICATION R EQUI REMENTS REMOVED_ MILITARY MICROCIRCUITS, INACTIVE D I G I T A L , T T L , LOW POWER, MONOLITHI C S I L I C O N COMPARATORS, FOR NEW DE S I GN AF TER DATE OF T H I S
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MIL-M-38510/448
L-M-38510/44A
1IL-M-38510,
MIL-M-38510/44B
040/A2
ax 3003
1N3064
MIL-M-38510/115
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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55199
Abstract: lm 1766 LM38 LM series voltage regulators RETS185H calibration procedure for thermocouple 15CC DIODE 55199 semiconductor LM-38
Text: LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally
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LM185-2
5/LM285-2
5/LM385-2
LM-185-2
LM334
tl/h/5519â
55199
lm 1766
LM38
LM series voltage regulators
RETS185H
calibration procedure for thermocouple
15CC DIODE
55199 semiconductor
LM-38
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lm38510
Abstract: IC HE 4011 13005 2 ANI 1015 ha 13441 HC 4011 logic gate TT 46 N 16 LOF STD-183
Text: MIL-M-38510/5C 20 MAY 1985 SUPERSETS MI L-M-0038510/5BC19 1 December 1975 and MIL-M-38510/5A 6 December 1971 See 6.7) i MI L I T A R Y SPECIFICATION M I CR OC I R C U I T S , DIGITAL, AMD-OR-INVERT GATES, TTL, MONOLITHIC S I L I C O N T h i s s p e c i f i c a t i o n 1s a p p r o v e d f o r use by a l l D e p a r t
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MIL-M-38510/5C
MII-M-0038510/5BC19)
MIL-M-38510/5A
MIL-M-38510.
KIL-M-38510/5A
L-M-38510/5C
lm38510
IC HE 4011
13005 2
ANI 1015
ha 13441
HC 4011 logic gate
TT 46 N 16 LOF
STD-183
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TFK U 111 B
Abstract: TFK diodes S10 ICF CP 1005 TFK 03 diodes rfox 23 tfk 101 5/16 -32 UNS 2A TFK diodes s10 120 saat tfk 545
Text: MIL-K—38510/79C 05 NOVEMBER 1987 w n r e n m r c -M IL -K -3 8 5 1 0 /7 9 B 28 F e b ru a r y 1984 M ILIT A R Y S P E C IF IC A T IO N M IC R O C IR C U ITS, O IG IT A L , B IP O LA R . SCHOTTKY T T L , DATA SELECTO RS/M U LTIPLEXERS WITH TH R EE-STA TE O UTPUTS, MONOLITHIC SILIC O N
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MIL-M-38510/79C
MIL-M-38S10/79B
54S257
54S258
54S253
MIL-M-38510/79C
TFK U 111 B
TFK diodes S10
ICF CP 1005
TFK 03 diodes
rfox
23 tfk 101
5/16 -32 UNS 2A
TFK diodes s10 120
saat
tfk 545
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55199
Abstract: 55199 semiconductor lm38s LM185 LM185-25 LM385-2 LM 2480 na
Text: Semiconductor LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally
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LM185-2
5/LM285-2
5/LM385-2
LM-185-2
LM334
tl/h/5519â
55199
55199 semiconductor
lm38s
LM185
LM185-25
LM385-2
LM 2480 na
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j001 1003
Abstract: 13001 TRANSISTOR si 13001 j001 1003 led 13001 TRANSISTOR equivalent 13001 LZ transistor te 13001 marking 2U diode t5 tr 13001 darlington array 2804
Text: M I L - M - 385 1 0 / i 41 A 4 Mav 1988 WfRSEfilNi-M I L - M - 385 10/ 14 l 1 N o v e m b e r 1984 MILITARY SPECIFICATION MICROCIRCUITS, DARLINGTON T R A N S I S T O R A R R A Y , S E V E N AND E I G H T MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d
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MIL-M-38510.
MIL-H-38510
MIL-M-38510
j001 1003
13001 TRANSISTOR
si 13001
j001 1003 led
13001 TRANSISTOR equivalent
13001 LZ
transistor te 13001
marking 2U diode t5
tr 13001
darlington array 2804
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lm38s
Abstract: No abstract text available
Text: ” ielí -Om LM285/285B-1.2V LM285/285B-2.5V LM385/385B-1.2V LM385/385B-2.5V Semiconductor, Inc. LOW POWER, BANDGAP VOLTAGE REFERENCES GENERAL DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ Output Tolerance. 1% or 2%
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LM285/285B-1
LM285/285B-2
LM385/385B-1
LM385/385B-2
LM285/385-1
LM285/385-2
30ppm/Â
O-92-3
lm38s
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