LITTON ELECTRON DEVICES Search Results

Contextual Info: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z

transistor af18

Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
Contextual Info: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77

Contextual Info: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate

litton

Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Contextual Info: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1

Contextual Info: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z

litton

Abstract: Litton Solid State
Contextual Info: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I

Litton LN-200

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D • 5S44E00 00DDS2Ö RIO ■ L I T T Dual G a te M icrow ave GaAs FET Electron Devices D-2730 Preliminary Specifications FEATURES MAG 16 d B 18 GHz - Noise Figure 2.5 dB @ 45 18 Ghz » - 430 50- t 45 t 50 Gain at NF 13 dB @ 18 Ghz

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz

Contextual Info: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells

S3V 82

Contextual Info: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A

TRANSISTOR A107

Contextual Info: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature

D2502

Abstract: transistor A6t 75 250-2 MAG TH408 D-2502
Contextual Info: Linon h i- a i i V in JIND/LITTON .N J // L IT LITTON SOLID SbE D • 5 5 4 4 20 0 00 00 50 Ö OSE ■ LITT Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -25040 Noise Figure 2.2 dB @ 8 ■

Litton Electron Devices microwave tubes

Abstract: Litton klystron klystron L-4880B UG344 two cavity klystron reflex klystron klystron pin connection 4880B Litton Electron Devices
Contextual Info: Litton Electron Devices 103S Waîrrmnsrar fîrivê Wiiiflmspnn Pennsylvania 17701 Pnona 717 326-3561 Fax: (717) 326-2903 PRODUCTION SPECIFICATION TYPE L-4880A, B, C, E, F REFLEX KLYSTRON DESCRIPTION Conduction Cooled, Long Life, Low Distortion, Extremely Stable Reflex

Contextual Info: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z

S3V 83

Abstract: S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92
Contextual Info: LI T T O N I N D / L I T T O N SO LI » Linon SbE D • SSMMHDG OQGOSOM 4Ö7 « L I T T Low-Noise M icrow ave GaAs FET Electron Devices D-1503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 2.6 dB @ 18 GHz 94 Y777\ DRAIN ■ Gain a t NF 6.5 dB @ 18 GHz

D2502

Contextual Info: U lH ’ON IN D /L IT TO N SOLID il I I A I I I 5bE D • 5 5 4 4 2 0 0 DGDD5GÛ DES ■ L I T T Low Noise/Medium Power Microwave G aA s FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -250► 40 - Noise Figure 2.2 de @ 8 [77777 ghz

L4945A

Abstract: L-4945A litton thyratron tube operation thyratron 1000423 Litton Electron Devices
Contextual Info: Litton_ Electron Devices 103S Westminster Ori«« W liam tport. Pennsy»varia 17701 Phone: 717 33*9561 Fax: (717) 33B-28Û3 DATA SHEET THYRATRON TYPE L -49 45A DEUTERIUM, CERAMIC-METAL, TETRODE WITH GRADIENT GRID DESCRIPTION The L-4945A is a ceramic-metal, double-gap, ter rode# deuterium thyratron.

T-989

Abstract: 32NC2A B500 stub tuner waveguide L-6S43A
Contextual Info: T-989 From- 14:25 08-28-01 Electron Devices REVISION S SPEOIFICATION SHEESPECPECIFICATION THE PROVISIONS - TYPE NO: L-6S43A EFFECTIVE 7-z_-'9/ APPLY TO THIS OF THE LATEST ISSUE OF MIL-E-I F-534 P.02 OF SHEET SPECIFICATION B500 MHz to 9600 MHz, forced ,r DESCRIPTION: Magnetron, pulsed, 65 kWpeak power, mechanically tunable

elmwood sensors ltd

Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
Contextual Info: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this

epa025

Abstract: excelics epa025 EFA072A EFA025A excelics w2343 AVANTEK transistor
Contextual Info: Hydrogen Test on EFA072A and EFA025A Background It was reported from the field that when EFA072A devices from W234-2 were life tested in hydrogen environment, the Idss of the DUT has increased by 15% or so in a few days. However, when the devices were life tested in open air

l4768

Abstract: magnetron 2.45 magnetron
Contextual Info: RZV!S IONS INITIATED 89-02-02 WJNW,DJL,RB A REVISED PER ECO-A5177 93-04-16 RLB,JF, JRL B REVISED PER ECO-A7661 95-05-18 RLB,JF, JRL C REVISED PER ECO-A11654 98-01-15 &irsQ,.- jo- INIT PRODDCT DEBCRIPTION: QKNRAfki. Coaxial Magnetron, mechanically tunable from 34.5 GHz to 35.5 GHz, 20 to 40 kw

ACT1020

Abstract: JH05 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 44 pin actel 1020b JEDEC-A113 ACTEL 1020B ACP55 smd U1p Jl03 JL-03
Contextual Info: Quality & Reliability Guide February 2001 2001 Actel Corporation All Rights Reserved. Actel and the Actel logo are trademarks of Actel Corporation. All other brand or product names are the property of their respective owners. Contents 1. Overview of Actel’s Quality and Reliability Guide . . . . . . . . . . . . . . . . . . . .1

Germanium itt

Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Contextual Info: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470