LITHIC SYSTEMS Search Results

MM74C14N

Contextual Info: Semiconductor February 1988 MM54C14/MM74C14 Hex Schmitt Trigger General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors.

2090-4050

Abstract: ICL8211 LM199
Contextual Info: Intersil High-Reliability Products ICL8211/ICL8212 High Reliability Programmable Voltage Detector GENERAL DESCRIPTION FEATURES The Intersil ICL8211/8212 are micropower bipolar mono­ lithic integrated circuits intended primarily for precise volt­ age detection and generation. These circuits consist of an

USSR

Abstract: h574 Scans-048 DSAGER00026 K ussr
Contextual Info: GENERAL DESCRIPTION The K574yjU high slew rate mono­ lithic operational amplifier is a versatile device, a result of significant improvement of the high-performance K14oyH8 op amp's response characteristics. The K574yjU has an offset null circuit and external compensation. The

EDI88128C

Contextual Info: EDI88128C W D\ 128Kx8 Monolithic ELECTRONIC DESIGNS, INC. Static Ram 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono­ 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.

Contextual Info: TD62301F TD62302F BIPO LAR DIGITAL INTEGRATED C IR C U IT SILICO N M O NO LITHIC TD62301F LOW SATURATION DRIVER TD62302F . LOW SATURATION DRIVER Features . Low Saturation Outputs . VcE sat = 0.7V Max. @ IOUT=150raA . Output Rating . 15V/200mA

Contextual Info: ^EDI EDI88128C 128Kx8 Monolithic Static Ram EkfCIROMC DESGNS. N C 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono­ 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.

Contextual Info: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen­ eral purpose silicon NPN transistors on a common mono­ lithic substrate. Two of the transistors are internally con­

Contextual Info: Semiconductor, Inc. 'W TC7662B DC-TO-DC VOLTAGE CO NVERTER FEATURES GENERAL DESCRIPTION • The TC7662B DC-to-DC Voltage Converter is a mono­ lithic CMOS voltage conversion IC that guarantees signifi­ cant performance advantages over other similar devices. It

8212C

Abstract: ICL8211 ICL8211MTY ICL8212 ICLS212 ICU211 1121 diode LED LG high voltage diodes schematic diagram tv sharp ICL8212MTY
Contextual Info: Intersil Hlgh-Reliabllity Products ICL8211/ICL8212 High Reliability Programmable Voltage Detector GENERAL DESCRIPTION FEATURES The Intersil ICL8211/8212 are micropower bipolar mono­ lithic integrated circuits intended primarily for precise volt­ age detection and generation. These circuits consist of an

NE612N

Abstract: NE612 49mhz cordless telephone NE612 equivalent NE614 Cordless telephone 49mhz high power hartley oscillator ne614 Colpitts parallel-mode tank circuit mosfet vhf power amplifier
Contextual Info: Signetìcs NE612 Double-Balanced Mixer and Oscillator Product Specification Linear Products PIN CONFIGURATION DESCRIPTION FEATURES The NE612 is a low-power VHF mono­ lithic double-balanced mixer with on­ board oscillator and voltage regulator. It is intended for low cost, low power

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TO SHIBA CIRCUIT TECHNICAL TC74LVQ245F, TC74LVQ245FW TC74LVQ245FS DATA SILICON M O NO LITHIC OCTAL BUS TRANSCEIVER The TC74LVQ245 is a high speed CMOS OCTAL BUS TRANSCEIVER fabricated w ith silicon gate and d ou b le­

32R2020R

Contextual Info: SSI 32R2320/21/22/23/24 ¿ihm systems 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK G roup/C om pany December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono­ lithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise

Contextual Info: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA M o n o lithic Dual S w itching Diode MMBD6 1 0 0 LT1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage vR Vdc Forward Current if mAdc iFM(surge) 70 200

NE604AD

Abstract: NE604AN SA604AN ne604 455khz NE605 equivalent
Contextual Info: Signetics NE/SA604A H igh-Perform ance Low-Power FM IF System Preliminary Specification Unear Products DESCRIPTION The NE/SA604A is an improved mono­ lithic low-power FM IF system incorpo­ rating two limiting intermediate frequen­ cy amplifiers, quadrature detector, mut­

Contextual Info: HFA3664 HARRIS S E M I C O N D U C T O R PRELIMINARY 2.7GHz UpConverter with Gain Control June 1997 Description Features RF Frequency Range. 2.3GHz to 2.7GHz The HFA3664 UpConverter with Gain Control is a mono­ lithic bipolar device for up con­

Contextual Info: MM54C42/MM74C42 BCD-to»-Decimal Decoder General Description The MM54C42/MM74C42 one-of-ten decoder is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors. This decoder produces a logical “ 0” at the output corre­

mb3759

Abstract: d16011
Contextual Info: ASSP Pulse-Width-Modulation Control Circuit MB3759 PULSE-WIDTH-MODULATION CONTROL CIRCUIT PUSH-PULL/SINGLE-ENDED OUTPUT MODE The Fujitsu MB3759 is complete pulse-width modulation control system on a single mono­ lithic chip. The MB3759 consists of an internal 5.00V reference, two or-connected ampli­

TXM AX-1

Abstract: ax-1 txm ax-1S txm
Contextual Info: HFA3663 HARRIS S E M I C O N D U C T O R PRELIMINARY 2.3GHz UpConverter with Gain Control June 1997 Description Features RF Frequency Range. 2.0GHz to 2.3GHz The HFA3663 UpConverter with Gain Control is a mono­ lithic bipolar device for up con­

AN-90

Abstract: MM54C42 MM54C42J MM74C42 MM74C42J
Contextual Info: MM54C42/MM74C42 BCD-to•-Decimal Decoder General Description The MM54C42/MM74C42 one-of-ten decoder is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors. This decoder produces a logical “ 0” at the output corre­

MM74C14J

Abstract: AN-90 MM54C14 MM74C14 MM74C14N
Contextual Info: February 1988 M M 54 C 1 4/M M 74 C 14 Hex Schm itt T rig g er General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors.

Contextual Info: TO SHIBA TC74VHC03F/FN/FT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M O NO LITHIC TC74VHC03F, TC74VHC03FN, TC74VHC03FT Note The JEDEC SOP (FN) is not available in QUAD 2 -INPUT NAND GATE (OPEN DRAIN) Japan The TC74VHC03 is an advanced high speed CMOS 2-INPUT

3B115

Abstract: 3B117
Contextual Info: SSI 32R2320/21/22/23/24 ¿mmsifskms' 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono­ lithic integrated circuit designed tor use with twoterminal recording heads. They provide a low noise

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

Contextual Info: SSI 32R2320/21/22/23/24 mmMktns' 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono­ lithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise