LHDD63 Search Results

AGT transistor

Abstract: transistor 2n 456 2N6788 2N678
Text: 3 3 H A R R 2N6788 I S N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-205A F BOTTOM VIEW A AA A AA1 I * 0 o.OA, lOOV • rDS on = 0 .3 0 n • S O A is P ow er-D issip atio n Lim ited SOURCE • N anosecond S w itching S peeds