LH28F016LLT Search Results

etox

Abstract: 5ses LH28F008SA LH28F016SU 150NSEC BSR10
Contextual Info: SHARP F e b ru a ry 1 9 9 6 FLASH MEMORY LH28F016LLT-xx SHARP CORPORATION N O TIC E • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy­ right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or

D1553

Abstract: 3100-CC
Contextual Info: SHARP LH28F016LLT 16 MBIT 1 MBIT x 16, 2 MBIT x 8 3V SINGLE VOLTAGE FLASH MEMORY FEATURES • 3V Write/Erase Operation (3V Vpp) - 2.7V-3.6V Write»Erase»Read Operation • User-Configurable x8 or x16 Operation • 120 ns Maximum Access Time (Vcc=3.0V) • 150ns Maxumam Access Time (Vcc=2.7V)

Contextual Info: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80

bsh7

Abstract: f b t bsh7
Contextual Info: SHARP SHARP LHF16L01 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company, # W h e n using the products covered herein, please observe the conditions written herein

BA 6688 L

Contextual Info: 16M 1M FEATURES • 120 ns Maximum Access Time (VCC= 3 .0 V • 150 ns Maximum Access Time (VCC= 2 .7 V ) • 0.48 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block T O P V IE W -s 56 □ W P C E ,Z 2 55 □ W E LXZ 3 54 □ ÔË A 20 z

56-PIN

Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
Contextual Info: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory