LEVEL LOGIC MOSFET Search Results

F10N15L

Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level

F10N12L

Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)

F15N05L

Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Contextual Info: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m

2N6901

Contextual Info: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM

Contextual Info: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device

RFL2N05L

Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
Contextual Info: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■

BUK110-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface

mosfet fq transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

C5052

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

iec60134

Abstract: JESD22-A108C JESD22-A108-C JESD22A108C AN10721 JESD22 JESD22*108 A/IEC60134
Contextual Info: AN10721 Logic level VGS ratings for NXP power MOSFETs Rev. 01 — 18 July 2008 Application note Document information Info Content Keywords gate–source voltage, logic level, rating Abstract Explanation of the link between the absolute maximum rating of gate–source voltage VGS for a logic level power MOSFET, the design

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET_ _ DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK110-500L Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface

C5024

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

BUK1D1-50GL

Abstract: 8UK101-50GL
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK109-5OGL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

0n06

Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
Contextual Info: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic