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    LED19FC-TEC

    Contextual Info: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		LED19FC-TEC LED19FC-TEC 670x770 150-200mA PDF

    LED19FC-PR

    Contextual Info: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		LED19FC-PR LED19FC-PR 670x770 150-200mA PDF

    LED19FC-PR-WIN

    Contextual Info: LED19FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		LED19FC-PR-WIN LED19FC-PR-WIN 670x770 150-200mA PDF

    LED19FC-TEC-PR

    Contextual Info: LED19FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		LED19FC-TEC-PR LED19FC-TEC-PR 670x770 150-200mA PDF

    LED19FC-SMD5

    Contextual Info: LED19FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		LED19FC-SMD5 LED19FC-SMD5 670x770 150-200mA PDF

    LED19FC

    Contextual Info: LED19FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		LED19FC LED19FC 670x770 150-200mA PDF

    Product line

    Contextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact


    Original     		LED18 LED19 LED20 LED21 LED22 LED23 LED29 LED34 LED35 LED36 Product line PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


    Original     		RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI PDF