LDMOS TRANSISTOR Search Results

capacitor 47pf 200v

Abstract: ECJ1VB1H102K AN-067 thermistor 100k ohm thermistor 100k AN067 NOTE-AN067 EAN-103965 LDMOS 30w amplifier
Contextual Info: APPLICATION NOTE-AN067 LDMOS Bias Temperature Compensation Introduction This paper is intended to provide useful guidance building a temperature compensating bias network for Sirenza LDMOS power modules and Sirenza packaged LDMOS transistors. LDMOS Characteristics

Contextual Info: AN_BLF574 BLF574 LDMOS Transistor Model Rev. 01 — 12-08-2008 Application note Document information Info Content Keywords BLF574, BLF574, LDMOS, model Abstract This document describes the BLF574 LDMOS transistor model including its installation, usage and verification.

Contextual Info: AN_BLS6G3135-120i BLS6G3135-120i LDMOS Transistor Model Rev. 02s — 21-05-2008 Application note Document information Info Content Keywords BLS6G3135-120i, BLS6G3135-120i_ LDMOS, model Abstract This document describes the BLS6G3135-120i LDMOS transistor model

Contextual Info: AN_BLS6G3135-20i BLS6G3135-20i LDMOS Transistor Model Rev. 01s — 02-05-2008 Application note Document information Info Content Keywords BLS6G3135-20i, BLS6G3135-20i_ LDMOS, model Abstract This document describes the BLS6G3135-20i LDMOS transistor model including its installation.

Contextual Info: AN_BLF578 BLF578 LDMOS Transistor Model Rev. 01 — 25-09-2008 Application note Document information Info Content Keywords BLF578, BLF578, LDMOS, model Abstract This document describes the BLF578 LDMOS transistor model including its installation, usage and verification.

Contextual Info: AN_BLF878 BLF878 LDMOS Transistor Model Rev. 01 — 28-07-2008 Application note Document information Info Content Keywords BLF878, BLF878, LDMOS, model Abstract This document describes the BLF878 LDMOS transistor model including its installation, usage and verification.

C801

Abstract: 1/db3 c801
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.

AN1228

Abstract: "RF MOSFETs" AN1226
Contextual Info: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

LDMOS

Abstract: AN1226 AN1228
Contextual Info: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

SD57045

Abstract: AN1224
Contextual Info: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher

SD57045

Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

CAPACITOR 33PF

Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

Contextual Info: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

Contextual Info: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device

Contextual Info: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very

Contextual Info: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

c102 TRANSISTOR

Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

Contextual Info: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high