IRL5Y7413CM
Abstract: No abstract text available
Text: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4164A
O-257AA)
IRL5Y7413CM
O-257AA
IRL5Y7413CM
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Untitled
Abstract: No abstract text available
Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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93976B
IRF9140
O-204AA/AE)
-100V
-100A/Â
-100V,
O-204AA
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IRF (10A) 55V
Abstract: IRF5YZ48CM
Text: PD - 94019A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5YZ48CM 55V RDS(on) 0.029Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4019A
O-257AA)
IRF5YZ48CM
O-257AA
IRF (10A) 55V
IRF5YZ48CM
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IRFN9140
Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553F
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANS2N7236U
JANTX2N7236U
JANTXV2N7236U
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94019 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5YZ48CM 55V RDS(on) 0.026Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRF5YZ48CM
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90555E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International
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Original
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90555E
O-254AA)
IRFM240
JANTX2N7219
JANTXV2N7219
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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O-204AA/AE)
IRF240
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IRHF58Z30CM
Abstract: IRHY53Z30CM IRHY54Z30CM IRHY57Z30CM JANSR2N7482T3
Text: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω
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PD-93824E
IRHY57Z30CM
JANSR2N7482T3
O-257AA)
MIL-PRF-19500/702
IRHY57Z30CM
IRHY53Z30CM
JANSF2N7482T3
IRHY54Z30CM
IRHF58Z30CM
JANSR2N7482T3
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PDF
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diode.18
Abstract: IRF 450 MOSFET IRFM240 JANTX2N7219 JANTXV2N7219 A1276 90555
Text: PD - 90555E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International
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Original
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90555E
O-254AA)
IRFM240
JANTX2N7219
JANTXV2N7219
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
diode.18
IRF 450 MOSFET
IRFM240
JANTX2N7219
JANTXV2N7219
A1276
90555
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PDF
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jantx2N7236
Abstract: IRFM9140 JANS2N7236 JANTXV2N7236 c 1384
Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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Original
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90495G
O-254AA)
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
MIL-PRF-19500/595
O-254AA.
MIL-PRF-19500
jantx2N7236
IRFM9140
JANS2N7236
JANTXV2N7236
c 1384
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90495F POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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Original
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90495F
O-254AA)
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
MIL-PRF-19500/595
O-254AA.
MIL-PRF-19500
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PDF
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IRHY53130CM
Abstract: IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 JANSR2N7484T3
Text: PD - 93826C IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 TECHNOLOGY 4# c Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si)
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93826C
IRHY57130CM
JANSR2N7484T3
O-257AA)
MIL-PRF-19500/702
IRHY53130CM
IRHY54130CM
JANSF2N7484T3
IRHY53130CM
IRHY54130CM
IRHY57130CM
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
JANSR2N7484T3
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PDF
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IRHY57133CMSE
Abstract: T0-257AA
Text: PD - 94318A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides
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4318A
O-257AA)
IRHY57133CMSE
T0-257AA
MIL-STD-750,
MlL-STD-750,
O-257AA
IRHY57133CMSE
T0-257AA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94318 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides
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Original
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O-257AA)
IRHY57133CMSE
T0-257AA
MIL-STD-750,
MlL-STD-750,
O-257AA
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640
UF640
O-220
O-220F
UF640L
QW-R502-066
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PDF
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BH-1
Abstract: AN-994 EIA-541 IRFR3303 IRFU120 R120
Text: PD - 95070A IRFR3303PbF IRFU3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G S
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5070A
IRFR3303PbF
IRFU3303PbF
IRFR3303)
IRFU3033)
IRFR/U3303PbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
BH-1
AN-994
EIA-541
IRFR3303
IRFU120
R120
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number
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Original
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94318C
IRHY57133CMSE
JANSR2N7488T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
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PDF
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IRF640
Abstract: IRF640 equivalent IRF640 mosfet IRF640 applications note power MOSFET IRF640 IRF640 n-channel MOSFET
Text: DC COMPONENTS CO., LTD. IRF640 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.18 Ohm ID = 18 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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Original
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IRF640
O-220AB
IRF640
IRF640 equivalent
IRF640 mosfet
IRF640 applications note
power MOSFET IRF640
IRF640 n-channel MOSFET
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PDF
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2SK891
Abstract: n channel t mos transistor
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 0T-MOSII 2SK891 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . L o w D r a i n -Source ON Resistance :R d s ON)= 0.14il(Typ.)
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OCR Scan
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2SK891
300/JA
00A/us
2SK891
n channel t mos transistor
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PDF
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2SJ464
Abstract: No abstract text available
Text: TOSHIBA 2SJ464 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ464 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rd S (ON)= 64mO (Typ.)
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OCR Scan
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2SJ464
-100M
-100V)
961001EAA2'
2SJ464
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PDF
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irfp240
Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Text: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFP240,
IRFP241,
IRFP242,
IRFP243
TA1742s
1-800-4-HARRIS
irfp240
IRFP242
IRFP243
Harris Semiconductor irfp240
Mosfet irfp240
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRFP240
O-247
180i2
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PDF
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TA17421
Abstract: No abstract text available
Text: y *“ * RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 18A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFM18N08,
RFM18N10,
RFP18N08,
RFP18N10
TA17421.
RFM18N08
RFM18N10
RFP18N08
100i2
TA17421
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLS640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic Level Gate Drive = 0.18 ß ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 9.8 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area
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OCR Scan
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IRLS640A
O-220F
200nF
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PDF
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