LD 2.5A Search Results

N25A

Abstract: 2SK1300 2SK1305 4AK20 SP-10 opel
Contextual Info: HITACHI 4AK20-SILICON N-CHANNEL POWER MOS FET ARRAY HIGH S P E E D P O W E R S W IT C H IN G • FE A T U R E S • Low On-Resistance Rds on & 0.25 Q , VGS = 10 V, lD= 2.5 A Rds (on) ^ 0.35 £1, VQS = 4 V, lD = 2.5 A • Capable of 4 V Gate Drive

FQB3N40

Abstract: FQI3N40
Contextual Info: QFET N-CHANNEL FQB3N40, FQI3N40 FEATURES BV qss = 400V Advanced New Design R D S O N = 3 -4 i 2 Avalanche Rugged Technology lD = 2.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k

A5 DIODE 22-35 L

Contextual Info: H Z7 SGS-THOMSON ^ 7 # . L6370 M IS i[U l© ¥ ® ® ö ü lD g l 2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRODUCT PREVIEW • 2.5A OUTPUT CURRENT ■ 9.5V TO 35V SUPPLY VOLTAGE RANGE . INTERNAL CURRENT LIMITING . THERMAL SHUTDOWN

IRF820

Abstract: top 258 pn
Contextual Info: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: SFS9510 A dvanced Power MOSEET FEATURES B ^ • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175°C Operating Temperature dss - ^ D S o n = lD ■ Extended Safe Operating Area ■

Contextual Info: IRFR420 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:

Contextual Info: ISL9506 Data Sheet August 13, 2008 Multiphase PWM Controller with Programmable Output Voltage Features 1 • Small Footprint 40 Ld 6x6 QFN Package • Pb-Free RoHS compliant Applications • Mobile Laptop Computers • High Performance Point-of-Load Power Supply

SFS9510

Contextual Info: SFS9510 Advanced Power MOSFET FEATURES b v dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -2.5 A ■ Improved Gate Charge ■ 175°C Operating Temperature ■ Extended Safe Operating Area

ISL6208

Abstract: thermistor ntc 60 0250 IRF7821 ISL9506 ISL9506HRZ ISL9506HRZ-T TB347 TB379
Contextual Info: ISL9506 Data Sheet August 13, 2008 Features 1 • Pb-Free RoHS compliant Applications • Mobile Laptop Computers • High Performance Point-of-Load Power Supply Pinout PGD_N DE_ENN DE_EN VR_EN VSEL6 VSEL5 VSEL4 VSEL3 ISL9506 (40 LD QFN) TOP VIEW 40 39

USSR DIODE

Abstract: IRF730
Contextual Info: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA

A244

Abstract: TP901 TP901C3 tp901c
Contextual Info: TP901 C3 5A k _ LOW LOSS SUPER HIGH SPEED RECTIFIER Features Insulated package by fully m o ld in g . • te V F Low VF Super high speed sw itch in g . Connection Diagram High reliability by planer design. • £ ! & : Applications r+ H

Contextual Info: IRFR/U420A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:

Contextual Info: SFR/U9120 Advanced Power MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V

Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V

IRFI620G

Abstract: irfi620
Contextual Info: PD-9.832 International S Rectifier IRFI620G HEXFET Power M OSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 200V ^DS on - 0 - 8 0 ^ lD - 4.1 A

D0405

Abstract: SSS4N80A
Contextual Info: SSS4N80A Advanced Power MOSFET FEATURES BV dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 2.5 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 jiA (Max.) @ VDS = 800V

IRF MOSFET 100A 200v

Abstract: IRL620A
Contextual Info: IRL620A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

2SK2718

Abstract: transistor 2sk2718
Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)

SSU3N90A

Contextual Info: SSU3N90A Advanced Power MOSFET FEATURES BV dss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jjA (Max.) @ VDS = 900V

IRF MOSFET 100A 200v

Abstract: ru-32 IRL620
Contextual Info: IRL620 A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

Contextual Info: SFS9644 Advanced Power MOSFET FEATURES B V dss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

SSU3N80A

Contextual Info: SSU3N80A Advanced Power MOSFET FEATURES B V dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 800V

sfr 135

Abstract: TA 8269 H diode SFR-135
Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

Contextual Info: SSP5N90A Advanced Power MOSFET FEATURES bvdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (M a x.) @ VOS= 900V