IRFR420 Search Results

9435

Contextual Info: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRFR420B

Abstract: IRFU420B
Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ifr420

Abstract: IFU420 IFR-420 irfr420
Contextual Info: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

irfu420

Abstract: IRFR420 International Rectifier IRFR420 ir*420 AN-994
Contextual Info: International [^Rectifier PD-9.599A IRFR420 IRFU420 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR420 Straight Lead (IRFU420) Available in Tape & Reel Fast Switching Ease of Paralleling

IRFU420B

Abstract: IRFR420B
Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRFU120

Abstract: IRFR420PBF U120
Contextual Info: PD - 95078A IRFR420PbF IRFU420PbF • Lead-Free Document Number: 91275 1/7/05 www.vishay.com 1 IRFR/U420PbF Document Number: 91275 www.vishay.com 2 IRFR/U420PbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information

International Rectifier IRFR420

Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 19 • Surface Mount (IRFR420/SiHFR420)

Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420)

U420

Abstract: ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148
Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E ]> • 7Tbm4B IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • DD17Pbfi TST ■ SMGK D-PACK Lower R d s o n Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure

IRFR420A

Abstract: IRFR120 IRFU120 IRFU420A
Contextual Info: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

irfu420

Abstract: ir*420 IRFU420PBF IRFR420 SiHFR420 SiHFR420-E3 SiHFU420 SiHFU420-E3 irfr420pbf
Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 19 • Surface Mount (IRFR420/SiHFR420)

IRFR420A

Abstract: IRFR420ATRLPBF IRFU420A SiHFR420A SiHFR420A-E3 SiHFR420ATL-E3 SiHFU420A SiHFU420A-E3
Contextual Info: IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFR420 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD - 95075 IRFR420APbF IRFU420APbF HEXFET Power MOSFET VDSS RDS(on) max ID 3.0Ω 3.3A D-Pak IRFR420APbF I-Pak IRFU420APbF

IRFR420

Abstract: IRFR421 U420
Contextual Info: IRFR420/421 IRFU420/421 N-CHANNEL POWER MOSFETS FEATURES D -P A K • L o w e r R d s <o n • Improved inductive ruggedness . . T ii g g g j lj g • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area

Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 19 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DPAK (TO-252)

EIA-541

Abstract: IRFR420A IRFU120 IRFU420A R120 U120 U420
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple

irfu420

Abstract: SiHFU420 IRFR420 SiHFR420 SiHFR420-E3 SiHFR420-GE3 irfr420pbf SiHFR420TR-GE3a
Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420)

Contextual Info: IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

IRFU420BTU

Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic

ir*420

Abstract: IRFR420TRPBF
Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420)

IRFR420

Abstract: IRFU420 SiHFR420 SiHFR420-E3 SiHFR420-GE3 SiHFU420
Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420)

MOSFET 4407

Abstract: MOSFET 4407 a irfu420 IRFR4209A IRFR420 TB334
Contextual Info: IRFR420, IRFU420 S e m iconductor Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode