LCC3 weight
Abstract: 2N2222A LCC1 2N2222ACSM-JQR-B 2N2222ACSM 2N2222ACSM4 2N2222ACSM4R
Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
2N2222ACSM"
2N2222ACSM
2N2222ACSM4
2N2222ACSM4-JQR-B
2N2222ACSM4R
2N2222ACSMCECC
2N2222ACSM-JQR-B
250MHz
LCC3 weight
2N2222A LCC1
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LCC1 weight
Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
2N2907ACSM"
2N2907ACSM
2N2907ACSM4
2N2907ACSM4-JQR-B
2N2907ACSMCECC
2N2907ACSM-JQR-B
200MHz
LCC1 weight
2N2907A LCC3
LCC3 weight
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ADXL203W
Abstract: ADXL103W ADXL103 ADXL103 DATA SHEET ADXL203 LCC3 weight ADXL203EB ADXL203CE AY 5 3500 measurement gold capacitor ADXL203W Vibration Sensor
Text: Precision ±1.7 g Single-/Dual-Axis i MEMS Accelerometer ADXL103/ADXL203 FEATURES GENERAL DESCRIPTION High performance, single-/dual-axis accelerometer on a single IC chip 5 mm x 5 mm × 2 mm LCC package 1 mg resolution at 60 Hz Low power: 700 A at VS = 5 V typical
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ADXL103/ADXL203
ADXL103/ADXL203
D03757-0-5/10
ADXL203W
ADXL103W
ADXL103
ADXL103 DATA SHEET
ADXL203
LCC3 weight
ADXL203EB
ADXL203CE
AY 5 3500
measurement gold capacitor ADXL203W Vibration Sensor
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adxl103 rev. B
Abstract: E81 equivalent
Text: Precision ±1.7 g Single-/Dual-Axis i MEMS Accelerometer ADXL103/ADXL203 FEATURES GENERAL DESCRIPTION High performance, single-/dual-axis accelerometer on a single IC chip 5 mm x 5 mm × 2 mm LCC package 1 mg resolution at 60 Hz Low power: 700 A at VS = 5 V typical
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ADXL103/ADXL203
ADXL103/ADXL203
D03757-0-4/10
adxl103 rev. B
E81 equivalent
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LCC3 weight
Abstract: MURS120CSM4
Text: MURS120CSM4 MECHANICAL DATA Dimensions in mm inches ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC SURFACE MOUNT PACKAGE 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003)
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MURS120CSM4
LCC3 weight
MURS120CSM4
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LCC3 weight
Abstract: 2N3439 2N3439CSM4
Text: SEME 2N3439CSM4 LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.40 ± 0.15
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2N3439CSM4
LCC3 weight
2N3439
2N3439CSM4
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LCC3 weight
Abstract: 2N4033CSM4
Text: 2N4033CSM4 HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) • CERAMIC SURFACE MOUNT HERMETIC PACKAGE 0.23 rad. (0.009)
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2N4033CSM4
-100mA
-500mA
-50mA
100MHz
300ms
LCC3 weight
2N4033CSM4
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LCC3 weight
Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
Text: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13
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2N3439CSM4
2N3440CSM4
LCC3 weight
TRANSISTOR 023
2N3439
2N3439CSM4
2N3440
2N3440CSM4
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2N2907A LCC3
Abstract: No abstract text available
Text: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15
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2N2907ACSM4R
150mA
2N2907A LCC3
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LCC3 weight
Abstract: 100MHZ 2N3501 2N3501CSM4
Text: 2N3501CSM4 HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006)
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2N3501CSM4
150mA
LCC3 weight
100MHZ
2N3501
2N3501CSM4
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2N2222ACSM4
Abstract: LCC3 weight 2n2222a
Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
150mA
2N2222ACSM4
LCC3 weight
2n2222a
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2N3700UB
Abstract: 2N3700
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
O-206AA)
T4-LDS-0185-3,
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Untitled
Abstract: No abstract text available
Text: Ordering information AC-DC Power Supplies Open Frame/Enclosed type LCC30A LC 1 C 2 30 A 3 -1 4 5 -O 6 1Series name 2Multiple output 3Output wattage 4100/120V input 5Output voltage combination 6Optional *6 A :G2 - V3 Common C :with Coating G :Low leakage current
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LCC30A
4100/120V
LCC30A-1
LCC30A-2
LCC30A-3
LCC30A-4
LCC30A-1)
20ms/DIV
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Untitled
Abstract: No abstract text available
Text: Ordering information AC-DC Power Supplies Open Frame/Enclosed type LCC30A LC 1 C 2 30 A 3 -1 4 5 -O 6 1Series name 2Multiple output 3Output wattage 4100/120V input 5Output voltage combination 6Optional *6 A :G2 - V3 Common C :with Coating G :Low leakage current
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LCC30A
100/120V
LCC30A-1
LCC30A-2
LCC30A-3
LCC30A-4
LCC30A-1)
20ms/DIV
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2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
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BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
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TA777AP
Abstract: opr 12 TA7774
Text: TOSHIBA TA7774P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA777AP TA7774F m m mm m m g m m mm m m •■ ■■ STEPPING MOTOR DRIVER 1C The TA7774P, TA7774F is 2 phase Bipolar stepping motor driver 1C designed especially for 3.5 or 5.25 inches FDD
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TA7774P/F
TA777AP
TA7774F
TA7774P,
DIP16-P-300-2
HSOP16-P-300-1
opr 12
TA7774
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NPN Transistor 450v 10mA
Abstract: No abstract text available
Text: Illl w . Illl 2N3439CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N3439CSM4
NPN Transistor 450v 10mA
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2N2222ACSM4
Abstract: No abstract text available
Text: Illl w . Illl 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN
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2N2222ACSM4
20ated)
100MHz
150mA
150mA
2N2222ACSM4
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50g k hall
Abstract: TA8466AF
Text: TOSHIBA TA8466AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8466AF 3 PHASE FULL W A V E BRUSHLESS DC MOTOR DRIVER 1C TA8466AF is a semi-linear type 3 Phase Full Wave Brushless DC Motor Driver 1C, developed as a cylinder motor driver for stationary VTRs.
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TA8466AF
TA8466AF
961001EBA1
HSOP16-P-300-1
50g k hall
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Untitled
Abstract: No abstract text available
Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8,1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58C1001
131072-word
ADE-203-028F
128-byte
HN58C1001R
TFP-32DAR)
44Rb203
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MO-1428A
Abstract: No abstract text available
Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8-bit. It has realized high speed, low power consumption and high
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HN58C1001
131072-word
ADE-203-028F
128-byte
HN58C1001R
TFP-32DAR)
HN58C10O1
MO-1428A
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1rfs
Abstract: No abstract text available
Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-028G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58C1001
128-kword
ADE-203-028G
131072-word
128-byte
TFP-32DAR)
1rfs
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA7774P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7774P, TA7774F STEPPING MOTOR DRIVER 1C The TA7774P, TA7774F is 2 phase Bipolar stepping motor driver 1C designed especially for 3.5 or 5.25 inches FDD head actuator drives.
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TA7774P/F
TA7774P,
TA7774F
TA7774F
I6-P-300-2
HSOP16-P-300-1
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LCC3 weight
Abstract: TA7774 TA7774F motor 0.15 A TA7774P fdd head
Text: TOSHIBA TA7774P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7774P, TA7774F STEPPING MOTOR DRIVER 1C The TA7774P, TA7774F is 2 phase Bipolar stepping motor driver 1C designed especially for 3.5 or 5.25 inches FDD head actuator drives. It consists of TTL compatible input circuit, dual bridge
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TA7774P/F
TA7774P,
TA7774F
TA7774F
DIP16-P-300-2
735TYP
75MAX
LCC3 weight
TA7774
motor 0.15 A
TA7774P
fdd head
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