2N2907ACSM4R Search Results

LE17

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N2907A LCC3

Contextual Info: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM