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    LC 945 P TRANSISTOR Search Results

    LC 945 P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LC 945 P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m lc 945

    Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
    Text: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 TI 945 945 npn 0034T 947 smd

    m lc 945

    Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd

    BDS945

    Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
    Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors


    OCR Scan     		PDF 711002b BDS943/945/947 T-33-0? OT223) BDS944/946/948. BDS943 BDS945 BDS947 m lc 945 J 3305 DDM317S

    lc 945 p transistor

    Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
    Text: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


    OCR Scan     		PDF S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184

    lc 945 p transistor

    Abstract: No abstract text available
    Text: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


    OCR Scan     		PDF S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor

    527H

    Abstract: D 1413 transistor S822T
    Text: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features


    OCR Scan     		PDF S822T 1300M 08-Apr-97 G8-Apr-97 527H D 1413 transistor S822T

    bd947

    Abstract: b0945 BD945 m lc 945 BD943 BD944
    Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		PDF BD943 BD945 BD947 7110fllT\ 043070T[ BD944; T-33-17 BD945 bd947 b0945 m lc 945 BD944

    transistor BC 945

    Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage


    OCR Scan     		PDF 2sa733. t0-92b 100mA 200mA 250mW transistor BC 945 BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945

    D 1991 AR

    Abstract: BD945
    Text: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		PDF BD943 BD945 BD947 7110fl2ti BD944; O-220. BD947 D 1991 AR

    b0945

    Abstract: bd947 BD944 BD945 BD943
    Text: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA


    OCR Scan     		PDF BD944; BD943 lc-500mA O-220. BD947. 7Z82147 7Z82146 003MS40 BD945 b0945 bd947 BD944 BD945 BD943

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733

    lc 945 p transistor

    Abstract: transistor LC 945 lc 945 transistor
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for


    OCR Scan     		PDF

    lc 945 p transistor NPN TO 92

    Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
    Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :


    OCR Scan     		PDF IJ11III lc 945 p transistor NPN TO 92 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR

    lc 945 p transistor NPN

    Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor
    Text: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.


    OCR Scan     		PDF PH2907 PH2907A. PH2222; PH2222A PH2222 PH2222A lc 945 p transistor NPN lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A 65LC lc 945 transistor

    c945 transistor

    Abstract: TRANSISTOR c945 p C945 P C945 NPN transistor transistor C945 C945 BR c945 transistor BR c945 C945 RI C945 TO92
    Text: TO-92 Plastic-Encapsulate Transistors ^ C 945 TR A N SISTO R N PN FEATURES HSR9RB9RB Pow er TO-92 P cm ; 0 .4 W (Tam b=25°C) C ollector current 1.E M I T T E R Ic 2.C O L L E C T O R m : 0.15 A G S flttSR S S B fiB E S C ollector-b ase voltage 3.B A S E


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    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		PDF 47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s

    lc 945 p transistor NPN TO 92

    Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
    Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.


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    lc 945 p transistor

    Abstract: 852 d TRANSISTOR lc 945 p transistor NPN 2sc945 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y
    Text: 2SC 945 NFN SILICON PIANAR EPITAXIAL TRANSISTOR 1I o h ! i| '£ ? r - r - . , - í ^ .- - .i '•-ÿ ! « f c * CASE TO-92B 2SC 945 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.


    OCR Scan     		PDF 2SC945 O-92B 2SC945 2SA733. 100mA 200mA 250mW lc 945 p transistor 852 d TRANSISTOR lc 945 p transistor NPN 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y

    lc 945 p transistor NPN

    Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor
    Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for


    OCR Scan     		PDF T-------------14 lc 945 p transistor NPN lc 945 p transistor transistor LC 945 lc 945 transistor

    S46 SMD

    Abstract: No abstract text available
    Text: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general


    OCR Scan     		PDF OT223 OT223) BDS943/945/947. BDS944 BDS946 BDS948 bb53T31 BDS944/946/948 DD34b43 S46 SMD

    ericsson 20144

    Abstract: lc 945 p transistor
    Text: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications.


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    TOP 948

    Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
    Text: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF 711002b BDS944/946/948 T-33-/7 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 S944 m lc 945 f 948 USB002 c 948 W468

    2sc 945 p transistor

    Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e


    OCR Scan     		PDF 2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC

    lc 945 p transistor NPN

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications.


    OCR Scan     		PDF