L7C197KC20 Search Results

Contextual Info: L7C197 2 5 6K x 1 Static RA M □ 256K x 1 Static R A M w ith Separate I / O , C h ip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Sp eed — to 15 ns m axim um □ Low P ow er O peration A ctive: 165 m W typical at 35 ns

Contextual Info: L7C197 *- — • — - - L7 C 1 0 7 256K x 1 Static RAM JbVUI-S ■ : XJHHO -■A I h □ 256K x 1 Static RAM with Separate 1 /0 , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

CY7C197

Abstract: IDT71257 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

Contextual Info: L q Q IC L7C197 25 6K x 1 Static RA M DEVICES INCORPORA I ET FEATURES DESCRIPTION □ 256K x 1 Static R A M w ith Separate I / O , C hip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Speed — to 15 ns m axim um

Contextual Info: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical

IDT71257

Abstract: CY7C197 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum