CY7C161
Abstract: No abstract text available
Text: LOGIC DEVICES INC SbE D • SSbS'lOS 0 0 0 1 0 3 0 b ÊÊ _ 16KX 4 Static RAM L 7 C 1 6 1 /1 6 2 DESCRIPTION □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology
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L7C161)
L7C162)
CY7C161/162
28-pin
L7C161
CY7C161
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Untitled
Abstract: No abstract text available
Text: L7C161/162 16Kx 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or I ligh Im pedance Write (L7C162) U A uto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 8 ns m axim um
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L7C161)
L7C162)
7C161/162
28-pin
L7C161/162
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES ^XNC IbE D •I SSh5T0S GOO.flSbb =1 ■ 16K x 4 Static RAM L7C 1 61/1 62 T - t t -23-/0 Features Description □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static
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L7C161)
L7C162)
L7C161
L7C162
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Untitled
Abstract: No abstract text available
Text: 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology □ H ighspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns
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L7C161)
L7C162)
CY7C161/162
28-pin
L7C161
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L7C162DC8
Abstract: L7C161PC35 L7C161 ma 8630 L7C161PC20 L7C161PC25 L7C161PC45 L7C161PC85 DM-85 L7C162DC2S
Text: L7C161/162 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM w ith separate I/O , transparent w rite L7C161 , or h ig h im pedance w rite (L7C162) The L7C161 an d L7C162 are high performance, low -pow er CMOS static RAMs. The storage cells are organ
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L7C161/162
L7C161)
L7C162)
CY7C161/162
28-pin
L7C161/162
L7C161
L7C162
L7C162DC8
L7C161PC35
ma 8630
L7C161PC20
L7C161PC25
L7C161PC45
L7C161PC85
DM-85
L7C162DC2S
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Untitled
Abstract: No abstract text available
Text: 16K x 4 Static RAM L 7 C 1 6 1 /1 62 Features Description_ □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static RAMs. The storage cells are organ
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L7C161)
L7C162)
L7C161
L7C162
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4Kx4
Abstract: No abstract text available
Text: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116
L6116L
16Kxl
L7C187
L7C164
4Kx4
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STATIC RAM 8464
Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116/
L6116L
L7C183
CY7C183
L7C184
STATIC RAM 8464
IMS1433
SSM6116
IMS1630
SSM6171
SSM7188
hitachi selection guide
SSM7164
hm6264
ic 6116 ram
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2102 Static RAM
Abstract: L7C161PC
Text: LOGIC DEVICES INC 2bE D • SSbSTGS 00G107S G ■ -0 ? 4K x 4 CMOS Cache-Tag Static RAM FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output
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00G107S
L7C180)
L7C181)
SSL4180,
SSL4181,
MK41H80,
MCM4180
22-pin
2102 Static RAM
L7C161PC
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Package 48 LCC
Abstract: No abstract text available
Text: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116
L7C187
L7C164
L7C165
L7C166
Package 48 LCC
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