L6116K Search Results

6116 ram

Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write

TZ1114

Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design

Contextual Info: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation

Contextual Info: 2K X 8 Static RAM Low Power L 6 1 1 6 /L 6 1 1 6 L DESCRIPTION □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW (L6116) typical at 35 ns

L6116PC85

Contextual Info: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The

QP7C128A

Abstract: QP6116A 8403609XA IDT6116LA90EB ns8002 8403601ja 84036143A IDT6116LA45L32B QP6116A-35DMB qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to vendor

smd a7n

Abstract: ZD103 ram IC 6116 circuit diagram
Contextual Info: L6116 2K DEVICES INCORPORATED FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW typical at 35 ns Standby typical :

L6116FMB90

Abstract: ns8002 qml-38535 CY6116A-55DMB 8403607ZA HM1-65162 84036103A IDT6116LA120EB IDT6116LA90EB 15KX
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to

EL6116

Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Contextual Info: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048

EL6116

Abstract: L6116M
Contextual Info: L6116 D t V I C t S IN C O R P O R A I b FEATURES □ 2K x 8 Static R A M w ith C hip Select Pow erd ow n, O utpu t Enable □ A uto-P ow erd ow n Design □ A dvanced C M O S Technology □ H igh Speed — to 10 ns m axim um □ Low P ow er O peration

Contextual Info: 2K X 8 Static RAM L 6 1 1 6 /L 6 1 1 6L Low Power DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdow n, O utput Enable U Auto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 10 ns m axim um □ Low Power Operation

6116 ram

Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum