L42752S Search Results

npn photo transistor

Abstract: SENSOR A-AMBIENT pH101 CE01 GALLIUM ARSENIDE ir detector
Contextual Info: 'NEC ELECTRONICS INC g* f w 7 30E D • L42752S 002^577 Q ■ PHOTO T R A N S IS T O R PH101 NPN E P IT A X IA L D A R LIN G T O N PHOTO P H O T O T R A N S IS T O R DETECTOR D E SC R IP T IO N The PH101 is a miniature NPN sillicon phototransistor hawing exceptionally stable characteristics and high illuminance sensiti­

MC5386

Contextual Info: N E C ELECTRONICS INC 72 i Ë| L42752S □□□Û3ciô 5 T-l^-o^-ol ^ NEC Electronics Inc. . - C O ^ ’O hA Tt H EA D Q U A R T ER S [. f V 'k ,* - ; f - »*. C- C A T V T R U N K A M P L IF IE R ~¿ " TEN TATIVE SPECIFICATION 3/i-69c: 4 5 0 MHz THIN FILM HYBRID INTEGRATED C IR C U IT

Phico D - 0

Abstract: nec upd 1511 Phico D 0 phico d-0 94 PHICO phico d-0 Phico DO - 0 TQ00
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿tPD78370 A , 78372(A) 16 BIT SINGLE-CHIP MICROCOMPUTER The /iPD78372(A) contains a high-speed, high-performance 16-bit CPU and offers powerful arithmetic operation functions. An A/D converter and a real-time pulse unit, which provide the real-time control required in motor control,

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

3T160

Abstract: ORP10 NT80
Contextual Info: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /x P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escription The /¿PD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).

73B34

Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Contextual Info: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode

Contextual Info: N E C ELECTRONICS INC blE T> • bM27525 D0342bfl 1BT H N E C E MC-421000A32 1,048,576 X 32-Bit Dynamic CMOS RAM Module JE/ W NEC Electronics Inc. Description Pin Configuration The MC-421000A32 is a fast-page dynamic RAM module organized as 1,048,576 words by 32 bits and de­

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

Rambus RDRAM ASIC

Abstract: RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

IC-3647

Abstract: B553 IC B553 PD750008CU-XXX
Contextual Info: DATA SH EET MOS INTEGRATED CIRCUIT ¿¿PD7 5 0 0 0 4 , 7 5 0 0 0 6 ,7 5 0 0 0 8 4 BIT SINGLE-CHIP MICROCOMPUTER The ¿¿PD750008 is one of the 75XL series 4-bit single-chip microcomputers, which provide data processing capability equal to that of an 8-bit microcomputer.

ne800299

Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz

ao d425

Abstract: d425
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000AB72F 2 M-W ORD BY 72-BIT DYIMAMIC RAM MODULE FAST PAGE M O DE ECC Description The M C-422000AB72F is a 2,097,152 w ords by 72 bits dynam ic R A M m odule on which 9 pieces of 16 M D R A M : /iPD4217800 are assembled.

UPD72070GF

Abstract: Intel 82077 MARK 4B 720KB TAG 8434 NEC 82077 UPD72070
Contextual Info: Chapter 1 General 1.1 System Overview The UPD72070 Floppy Disk Controller FDC is a new advanced Floppy Disk Controller that can support four standard Floppy Disk Drives (FDD)’s and two Apple specific FDDs, respectively. For the standard FDDs, the uPD72070 FDC

DATA VISION P 129-1 LCD

Abstract: DATA VISION LCD MODULE p34 DATA VISION LCD P70 DATA VISION LCD P72 DATA VISION LCD MODULE p70, DATA VISION LCD P60 P60NO D76064 PD780913 d78098
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /iPD78P0914 is a product of 78K/0 series, in which the on-chip mask ROM of the /xPD780913 is replaced by one-time PROM or by EPROM. As program write by user is possible, the /iPD78P0914 is best suited forevaluation, short-run and multiple-device

001107

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode

Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY

D78081

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /JPD78081,78082 8-BIT SIN GLE-CH IP M ICRO CO N TR O LLER DESCRIPTION The /iPD78081, 78082 are members of the /¿PD78083 subseries of the 78K/0 series microcontrollers. Besides a high-speed, high-performance CPU, these microcontrollers have on-chip ROM, RAM, I/O ports, 8-bit

Contextual Info: CHAPTER 7 UPD78234 TIMER/COUNTER UNITS is p r o v i d e d w i t h one 1 6 - b i t and th re e 8- b i t t i m e r / c o u n t e r u n it T a b l e 7-1 8-bit timer/ counter 1 8-bit timer/ counter 2 8-bit timer/ counter 3 2ch 2ch 2ch Ich External event counter

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.

upd7220

Contextual Info: CHAPTER 5. 1 HOST INTERFACE 1.1 AGDC INITIALIZATION CONTROL The AGDC must be reset upon power-up. Refer to the next section for details of the resetting procedure. After the AGDC has been reset: Preprocessor and drawing-processor . Idling state (ready to accept commands)

Contextual Info: N E C E LECTRONI CS INC • fc.7E D fc.427555 QQ3T5Q3 7 2R * N E C E fiPD78002Y Family pPD78001 BY/002BY/P014Y 8-Bit, K-Series Microcontrollers General Purpose With I2C Bus NEC NEC Electronics Inc. Preliminary_ September 1993 Description