transistor 600v
Abstract: 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M H04N60
Text: Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date :2010.10.14 Page No. : 1/6 HI-SINCERITY MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A
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MOS200404
H04N60
O-263
O-220AB
H04N60U,
H04N60E,
H04N60F
transistor 600v
4n60f
4n60e
04n60
4N60
4N60 application note
mosfet 4n60
4N60-E
PT10M
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STPS40170CG
Abstract: STPS40170CG-TR a2kk JESD97 STPS40170C STPS40170CT STPS40170CW l2f3
Text: STPS40170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 20 A VRRM 170 V Tj 175 °C VF(max) 0.75 V A1 K A2 K K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High junction temperature capability Low leakage current
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STPS40170C
STPS40170CG
O-220AB
STPS40170CT
O-220AB,
O-247,
STPS40170CG
STPS40170CG-TR
a2kk
JESD97
STPS40170C
STPS40170CT
STPS40170CW
l2f3
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Untitled
Abstract: No abstract text available
Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
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STH260N6F6-2
STH26
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4n60c
Abstract: 4N60 application note br 4n60 4N60 transistor 342 pf mosfet 4n60 4n60e 04N60C H04N60 H04N60E
Text: HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2007.07.17 Page No. : 1/6 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A
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MOS200404
H04N60
O-263
O-220AB
10sec
H04N60U,
H04N60E,
H04N60F
4n60c
4N60 application note
br 4n60
4N60
transistor 342 pf
mosfet 4n60
4n60e
04N60C
H04N60E
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
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DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current
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STTH30L06C
O-220AB
STTH30L06CT
O-247
STTH30L06CW
STTH30L06,
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Untitled
Abstract: No abstract text available
Text: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and
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STPS30170C
O-220FPAB
O-247
O-220AB
STPS30170CW
STPS30170CT
STPS30170CFP
STPS30170without
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smd diode L43
Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
Text: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
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C302N3-H
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
OT-23
BAT54
BAT54A
BAT54C
OT-23
BAT54S
UL94V-0
smd diode L43
smd diode L44
l44 smd marking code
smd diode code l4
smd diode L42
DIODE marking L4
marking L44 SOT23
L43 SMD
SMD DIODE L4
L43 DIODE
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STTH30L06
Abstract: STTH30L06C STTH30L06CG STTH30L06CG-TR STTH30L06CT STTH30L06CW
Text: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current
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STTH30L06C
O-220AB
STTH30L06CT
O-247
STTH30L06CW
STTH30L06,
STTH30L06
STTH30L06C
STTH30L06CG
STTH30L06CG-TR
STTH30L06CT
STTH30L06CW
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A2 DIODE SMD CODE MARKING
Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.
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C302S3-H
BAT54S3/BAT54AS3
BAT54CS3/BAT54SS3
OT-323
BAT54
BAT54A
BAT54C
OT-323
BAT54S
UL94V-0
A2 DIODE SMD CODE MARKING
smd diode marking code a2
S3 marking DIODE
smd diode code s3
A2 SMD CODE MARKING
marking code e1 smd
smd diode code l4
marking K2 diode
smd schottky diode s3 - 13
DIODE smd marking A1
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l4 marking code diode
Abstract: diode MARKING b3 DIODE 504
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number DSS6-0025BS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf
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DSS6-0025BS
O-252
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l4 marking code diode
diode MARKING b3
DIODE 504
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STPS30170CW
Abstract: STPS30170C STPS30170 JESD97 STPS30170CFP STPS30170CG STPS30170CG-TR STPS30170CT 935 schottky diode
Text: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and
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STPS30170C
O-220FPAB
O-247
O-220AB
STPS30170CW
STPS30170CT
STPS30170CFP
STPS30170CG
STPS30170CW
STPS30170C
STPS30170
JESD97
STPS30170CFP
STPS30170CG
STPS30170CG-TR
STPS30170CT
935 schottky diode
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STTH16L06CG
Abstract: STTH16L06CFP STTH16L06CT STTH16L06C STTH16L06CG-TR STTH16L06GG-TR
Text: STTH16L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 10 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 1.05 V trr (max) 35 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse recovery current
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STTH16L06C
O-220AB
STTH16L06CT
O-220FPAB
STTH16L06CFP
STTH16L06,
STTH16L06CG
STTH16L06CFP
STTH16L06CT
STTH16L06C
STTH16L06CG-TR
STTH16L06GG-TR
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Untitled
Abstract: No abstract text available
Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω
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STF1N105K3,
STFW1N105K3,
STP1N105K3
O-220FP,
O-220
STF1N105K3
STFW1N105K3
O-220FP
O-220
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Untitled
Abstract: No abstract text available
Text: STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.088 Ω 34 A STF40N60M2
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STF40N60M2,
STFI40N60M2,
STFW40N60M2
O-220FP,
STF40N60M2
STFI40N60M2
O-220FP
O-281)
DocID026364
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11NM50N
Abstract: STD11NM50N STP11NM50N STF11NM50N std11nm50 11nm50 STF11NM50N st STD11N
Text: STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax RDS on max ID 3 1 STD11NM50N STF11NM50N STP11NM50N 3 550 V < 0.47 Ω 8.5 A DPAK 1 2 TO-220 • 100% avalanche tested
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STD11NM50N
STF11NM50N,
STP11NM50N
O-220FP
O-220
STF11NM50N
O-220FP
11NM50N
STD11NM50N
STP11NM50N
STF11NM50N
std11nm50
11nm50
STF11NM50N st
STD11N
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stps20s100ct
Abstract: STPS20S100CFP diode marking H2 STPS20S100C STPS20S100CR TO-220FPAB package
Text: STPS20S100C POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 10 A VRRM 100 V Tj 175°C VF(max) 0.71 V A1 K A2 FEATURES AND BENEFITS • ■ ■ ■ High junction temperature capability for converters located in confined enrironment
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STPS20S100C
O-220AB
STPS20S100CT
O-220FPAB
STPS20S100CFP
O-220AB,
O-220FPAB.
stps20s100ct
STPS20S100CFP
diode marking H2
STPS20S100C
STPS20S100CR
TO-220FPAB package
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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O-252
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
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6P060AS
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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6-015AS
Abstract: No abstract text available
Text: DSS6-015AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 6A 0.62 V Part number DSS6-015AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses
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DSS6-015AS
O-252
6-015AS
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6-015AS
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Untitled
Abstract: No abstract text available
Text: EML4 / UML4N Transistors General purpose transistor isolated transistor and diode EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5
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2SC5585
RB521S-30
200mA,
100MHz
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D1NL40
Abstract: diode D1nl40
Text: n - n x V 'C X -Y - Super Fast Recovery Diode Axial Diode O UTLINE D IM E N S IO N S D1NL40 Unit •mm Package I AX057 o 400V 0.9A hLO rn ±0.1 20MIN • trr5 0 n s • 5mm \d " j -20min -M - m «EPM f Marking L4 9D
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D1NL40
AX057
------------------------------------20min
20MIN
J515-5
D1NL40
diode D1nl40
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AX057
Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code
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AX057
AX057
marking code 9d
D1NL4
DATE CODE FOR NITM
MU diode MARKING CODE
l4 marking code diode
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