L02 7T Search Results

Contextual Info: P r e l im in a r y C u s t o m e r P r o c u r e m e n t S p e c if ic a t io n «»SLO E Z86C02/E02/L02 L o w -C o s t , 5 1 2 - B y t e M ic r o c o n tr o lle r s ROM FEATURES Device ROM KB RAM* (Bytes) Speed (MHz) Z86C02 Z86E02 Z86L02 512 512 512 61

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

melody IC

Abstract: 8 sound effects generator IC 16-DIP HT2887 8050 s cmos sound generator d 9329 TOY SOUND sound effects chip SK 8050 S
Contextual Info: HOLTEK r r HT2887 Sound Effect and Melody Generator Features Auto power-off function Directly drive LED s or a piezo L O l or L 0 2 pad by m ask option 128-note melody PLA memory 256-note sound effect memory 128kHz system clock Minimum external components

FL02

Abstract: 54-619 EPT21
Contextual Info: Edition 0.1 94/Sept./2l = M B 54619= FUJITSU QUADRATURE MODULATOR (2.0GHz BAND UP CONVERTER BUILT IN) INTRODUCTION MB54619 is a quadrature modulator IC for IF modulation. The power consumption is as low as 25mA typ. because of Fujitsu's advanced technology. There ¡s a 2.0GHz band up converter on chip that makes the MB54619 ideally suitable for high frequen­

Contextual Info: SIEMENS GSM Receiver Circuit PMB 2401 Preliminary Data Bipolar 1C Features • Heterodyne receiver with demodulator • Down mixing from 900 MHz receiver band to the base band • Demodulation and generation of l/Q-baseband components • Low mixer noise 10 dB SSB

Contextual Info: MAR 1 3 1993 SIEM ENS PMB 2401 GSM Receiver Circuit Bipolar IC Preliminary Data Features • • • • • • • • • • • • • • Heterodyne receiver with demodulator Down mixing from 900 MHz receiver band to the base band Demodulation and generation of l/Q-baseband

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

11l02

Abstract: 1SV186 UPC2756T UPC2756T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UpC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA • SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

inductor neosid

Abstract: CFWM 450 SIEMENS BST h 05 90 SMD CODE L01 45S15B sj27 PMB2430 SIEMENS BST F 05 8 PIN SMD IC L02 Neosid Inductor
Contextual Info: SIEMENS Narrowband FM Receiver PMB 2430 Preliminary Data Bipolar 1C Features • Double conversion heterodyne receiver with limiter/ demodulator Low current consumption Reduced external components Low-noise temperature compensated internal reference voltages

capacitor 102 a1j

Abstract: s9348 LA 7841 L4901 tc5516 M74HC138 V02H B71A x2201
Contextual Info: VIA ; r L- L4901 PR ELIM IN AR Y D A TA D U A L 5V R E G U L A T O R WITH RESET • R E S E T O U T P U T HIGH O U T PU T C U R R E N T S : 101 = 300mA •02 = 400mA F IX E D P R E C IS IO N O U T P U T V O L T A G E 5V ±2% R E S E T FU N C TIO N C O N T R O L L E D B Y IN ­

block diagram for automatic room power control

Abstract: 34B DBM ATTW2012 W2012
Contextual Info: Data Sheet ATnT April 1995 ^ ^ ^ M ic ro e le c tro n ic s W2012 1.9 GHz Quadrature Modulator Features • W ide supply range: 2.7 Description V to 5.5 V ■ 2 GHz operation ■ More than -2 0 dBm output into 50 i i load single-ended ■ Internal 90° phase shifter is accurate over an IF

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs MMIC bE4,ìfl2Il DDlflD^l 74^ MGF7122 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MGF7122 is a monolithic microwave integrated circuit for use in 1,9GHz band power amplifiers. FEATURES •H igh output power Po=21 dBm, 7C/4DQPSK •Sm all size

RC003CL

Contextual Info: m/mi Advance Data Sheet December 1993 ; ^ 3^ Microelectronics RC003-Series Power Modules: 16 Vdc to 32 Vdc Inputs; 3 W Features • Small size: 1.75 in. x 0.43 in. x 0.81 in. ■ Low output noise ■ Constant frequency ■ High efficiency: 77% to 83% typical

13003 TRANSISTOR equivalent

Abstract: smd transistor marking A5 SMD TRANSISTOR MARKING xe TSX 01 7 TSX-10A 5501 gm tgx-8 tsx-1a TSX-11
Contextual Info: CRYSTAL UNITS • General .2 • CRYSTAL UNITS LINE UP.6 • FREQUENCY STABILITY .6 • Product Data

Contextual Info: rZ J *7#. SGS-THOMSON l!Q i» l« M [ (§ S GS2T5-D12 2W DUAL OUTPUT DC-DC CONVERTER Type GS2T5-D12 Vin Vout 'out 5V ±12 V ±100mA DESCRIPTION The GS2T5-D12 is a 2W DC-DC converter de­ signed to provide an isolated +12V/100mA and -12 V/100mA power source.

194vo

Contextual Info: S e m i c o n d u c t o r s K J ¿à / ^ V J L I - U Tuner IC for DAB Description The U2750B-B is a monolithically integrated tuner circuit fabricated with TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it includes two selectable mixers, one VCO, a SAW-filter

Contextual Info: Data Sheet September 1994 sA TsT Microelectronics DW025 Triple Output-Series Power Modules: 36 Vdc to 72 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case with separate case ground pin

sharp dbs tuner

Abstract: sharp lnb BSFR68G15 sharp tuner tuner pin tuner if 36MHz sharp dbs digital tuner 100PF 27MHZ 4* RF tuner
Contextual Info: PREPARED BY: C~CKED BY: DATE SPEC NO. EC-95648C 7. JUN. 1996 FILE NO. DATE 7. JUN. 1996 / SHARP ELECTRONIC COMPONENTS GROUP S}IARP CORPORATION K APPROVED BY: DATE SPECIFICATION ISSUE PAGE 7 REPRESENTATIVE DIVISION 8 ELECTRONIC COMPONENTS DIV. U OPTICAL DEVICE DIV

74LV03

Abstract: 74LV03D 74LV03DB 74LV03N 74LV03PW HCT03
Contextual Info: Philips Semiconductors Product Specification Quad 2-input NAND gate F EA TUR ES • • • Q U IC K REFERENCE DATA O ptim ized fo r Low V oltage applications: 1.0 to 3.6 V A ccepts TTL input levels betw een V cc = 2.7 V and V cc = 3 .6 V Typical V 0LP o u tp u t ground

Contextual Info: Panasonic Mobile Communication AN6494NSA Digital Communication Orthogonal Modulator 1C • Overview The AN6494NSA is an orthogonal modulator 1C for dig­ ital cellular telephones. It incorporates a phase shifter and an APC circuit for indirect modulation In the 1.5GHz

Contextual Info: Standard ICs 8-bit, serial IN, parallel OUT driver BA823/BA823F The BA823 and BA823F are 8-bit serial input, parallel output drivers. These monolithic ICs were developed as driv­ ers for thermal printing heads, LED character displays, and other similar applications.

C2KN

Abstract: C33411 Nippon capacitors
Contextual Info: O rder this docum ent by MC33411A/D M O T O R O L A MC33411A/B Advance Information 900 MHz Analog Cordless Phone Baseband w ith Compander The MC33411 900 MHz Analog Cordless Phone Baseband system is designed to fit the requirements of a 900 MHz analog cordless telephone

BA4904A

Abstract: AV011 av033 BA3906
Contextual Info: BA3902 BA3904A BA3906 Power supply, standard voltag The BA3902, BA3904A, and BA3906 are power supplies used in car audio systems. Features • available in an SIP-M12 package • four power sources available from each IC — BA3902: 5.0 V, 8.5 V x2 , 9.0 V

Tone Control amp

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23004-1E ASSP ll B B l lllll 3 V Single Power Supply Audio Interface Unit AIU M B 86435 • DESCRIPTION The FUJITSU MB86435 is an AIU (audio interface unit) LSI for +3 V single-power source digital telephone devices,