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    L TO KU BAND GAAS Search Results

    L TO KU BAND GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy

    L TO KU BAND GAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WR75 waveguide

    Abstract: waveguide WR-75 Celeritek, CTR ku vsat amplifier "ku band" amplifier CTR-145030 WR-75 CRT-145033
    Text: PRELIMINARY Ku-Band VSAT Transmit ODU Model CTR-145030 Model CTR-145033 FEATURES ❏ Designed for Broadband Data/IP and Telephony ❏ World’s Smallest ODU • 8” l x 3.4” (w) x 2.7” (h), 2.3 lbs. • Highly Efficient Thermal Transfer ❏ 14.0 to 14.5 GHz (Ku-Band) Frequency


    Original     		PDF CTR-145030 CTR-145033 WR-75 WR75 waveguide waveguide WR-75 Celeritek, CTR ku vsat amplifier "ku band" amplifier CTR-145030 CRT-145033

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    low noise hemt transistor

    Abstract: MGF4714CP InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a


    Original     		PDF MGF4714CP MGF4714CP 12GHz low noise hemt transistor InGaAs HEMT mitsubishi

    NE674

    Abstract: NE67400 NE67483B 0840 057 0615
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		PDF NE67400 NE67483B NE674 24-Hour NE67400 NE67483B 0840 057 0615

    4439 gm

    Abstract: NE76083A NE76084S NE76084-T1
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5


    Original     		PDF NE76084S NE76084S NE76084-T1 24-Hour 4439 gm NE76083A NE76084-T1

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour NE76038-T1

    NE674

    Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B
    Text: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		PDF NE67400 NE67483B NE674 24-Hour NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B

    gs 069 0605

    Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m


    Original     		PDF NE76084 NE76084-T1 NE76084-T1A gs 069 0605 NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V

    NE76083A

    Abstract: lg 83a
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21


    Original     		PDF NE76083A NE76083A 24-Hour lg 83a

    30374

    Abstract: NE76038 NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour 30374 NE76038-T1

    NE76083A

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • HERMETIC METAL/CERAMIC PACKAGE • ION IMPLANTATION 24 21 3.5 Noise Figure, NF dB • LG = 0.3 µm, WG = 280 µm 4 Ga 3 18 2.5 15 2 12 9


    Original     		PDF NE76083A NE76083A 24-Hour

    L to Ku Band Low Noise GaAs MESFET

    Abstract: No abstract text available
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY


    OCR Scan     		PDF NE67400 NE67483B NE674is L to Ku Band Low Noise GaAs MESFET

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		PDF MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24


    OCR Scan     		PDF NE76038 NE76038 -J22L NE76038-T1

    NE76084

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		PDF NE76084 NE76084 GHz21 lS211 NE76084S NE76084-T1 00b5511

    GM 2310 A

    Abstract: low noise hemt transistor MGF4714CP L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:m illim eters Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a


    OCR Scan     		PDF MGF4714CP MGF4714CP 12GHz GD-22 GM 2310 A low noise hemt transistor L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT

    0544S

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam


    OCR Scan     		PDF NE76084S NE76084S IS12I IS12I IS22I NE76084-T1 0544S

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim


    OCR Scan     		PDF NE76000 NE76000 NE760 IS12S21I NE76000L

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES MF7ftn NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz L g = 0 .3 im , W g = 2 8 0 |xm CO LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 NE76038-T1

    c 1181 H

    Abstract: lD-10mA
    Text: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION T he M GF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:millimeters Mobility T ransistor) is designed for use in L to Ku band amplifiers. T he plastic mold package offer high cost performance, and has a


    OCR Scan     		PDF MGF4714CP GF4714CP GD-22 c 1181 H lD-10mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 - 8 L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39.5 dBm at 14.0 GHz to 14.5 GHz


    OCR Scan     		PDF MW50320196 TIM1414-8L

    MGF1323

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


    OCR Scan     		PDF MGF1323 MGF1323, 13dBm 30rnA

    MGF4919G

    Abstract: GS 1223 mgf49 MGF4916G opa 741 4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F491xG series super-low -noise H E M T(H igh E lectron M obilily Transisto r) is de signed for use in L to Ku band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF491xG F491xG MGF491 4916G 4919G 12GFIz F4916G F4919G MGF4919G GS 1223 mgf49 MGF4916G opa 741 4919G

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro


    OCR Scan     		PDF NE76000 NE76000 NE760 lS22l IS12I 20jim NE76000L NE76000N