2N1163
Abstract: 2N1165 2N1167 2N2553 2N2552 2N2669 2N2556 2N1163A A6540 2N1167A
Text: germanium power transistors PNP TO-41 = 10 to 50A h fE @ Ic / V c e V c e o s u s V ebo Type# (Volts) (Volts) 2N1163 2N1163A 2N1165 2N1165A 2N1167 2N1167A 25 25 35 40 45 50 20 25 25 40 30 50 (Min-Max @ A/V) 15-65@25/l 15-65 25/l 15-65@25/l 15-65®25/l
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2N1163
2N1163A
2N1165
2N1165A
2N1167
2N1167A
2N1042
2N1043
2N1044
2N2553
2N2552
2N2669
2N2556
A6540
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surge protection mtbf
Abstract: AIQ02R300-L
Text: Embedded Power for Business-Critical Continuity Rev. 09.08.10_172 AIQ02R300-L 1 of 2 AIQ02R300-L 65 Watts Total Power: Input Voltage: # of Outputs: 65 Watts 28 V @ 2.32 A 390 V Single Special Features • 65 W Continuous power at 100˚C baseplate temperature
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AIQ02R300-L
AIQ02R300-L
Directive2002/95/EC
surge protection mtbf
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Untitled
Abstract: No abstract text available
Text: Alio Rechle vorbehallen/ 411 rights reserred k 5 D 2 3 1 Mating face according to : MIL-C-24308 / DIN 41652 / CECC 75301 -802 o l d si cvj x o o, 9 II e is j ^ - nut thread No. 1 contact 09 65 09 65 09 65 09 65 09 65 09 65 Port
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l411n
MIL-C-24308
F-95972
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harting eurl F-95972
Abstract: No abstract text available
Text: Alio Rechle vorbehallen/ 411 rights reserred k 5 D 2 3 1 Mating face according to : MIL-C-24308 / DIN 41652 / CECC 75301 -802 o l d si cvj x o o, 9 II e is j ^ - nut thread No. 1 contact 09 65 09 65 09 65 09 65 09 65 09 65 Port
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l411n
MIL-C-24308
F-95972
harting eurl F-95972
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Untitled
Abstract: No abstract text available
Text: Embedded Power for Business-Critical Continuity Rev. 06.20.12_172 AIQ02R300-L 1 of 2 AIQ02R300-L 65 Watts Total Power: Input Voltage: # of Outputs: 65 Watts 28 V @ 2.32 A 390 V Single Special Features • 65 W Continuous power at 100˚C baseplate temperature
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AIQ02R300-L
AIQ02R300-L
Directive2002/95/EC
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7812
Abstract: 7812 c
Text: Ille Rechte Vorbehalten/ HU rigkts ris a n i M a t i n g f ace a c c o r d i n g to : MIL-C-24308 / DIN 41652 / CECC 75301-802 thread No. 1 c o n ta c t jrriiimiira 0,60 PCB l a y o u t h o l e 09 09 09 09 09 09 65 162 6811 65 162 7811 65 162 5811 65 162 6812
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MIL-C-24308
F-95972
7812
7812 c
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PPMF 70-300.0 r K
Abstract: No abstract text available
Text: #6171 Discharge Capacitors 65 M 10 PPMF 70-300.0 r K 65 65 1 3 2 4 H 7 26 20 ø 5.5 Dielectric of metallized polypropylene 2 3 4 Threaded outputs B 65 1 Resin end sealing Aluminium case thick 1.2 mm L 355 375 Parameter Capacitance Tolerance Rated Voltage Operating Voltage
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faisab6171
PPMF 70-300.0 r K
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MC565
Abstract: No abstract text available
Text: M T T l I MC500/400 series \ •A N D " J-K F L IP - F L O P M C515 * M C 5 6 5 M C415 • M C 4 65 The M C 4 15 , M C 4 65 . M C51S . end M C S 65 ere clocked flip-flops th e i trigoer on th e negetive edge end perform the J-K logic fu nctio n. Each flip -flo p has an A N D in p u t gating
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MC500/400
MC565
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TO1C
Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65
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2K337S
2K3632
2N3733
T0-60
TQ-60
2N3866
N3924
2N392B
-2N3927
2N401Ã
TO1C
2N2188
IN404
2N2482
IN392
2N4040/A
2N994
INTEX
2NB642
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Untitled
Abstract: No abstract text available
Text: Alio Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 Mating face according to : MI L- C- 24308 / DIN 41652 / CECC 75301 -802 -0 hole No. 1 contact Pr i n t e d board layout component si de cavity Detoil. 09 65 222 3800 09 65 222 6800 09 65 222 7800 Port number
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F-95972
0965222x80x
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Untitled
Abstract: No abstract text available
Text: F - 1 9 9 '1 m sâm lêc c : RMINAL S Specifications: TS, TD Q l Insulater Material: s Black Glass Filled Polyester Termini I Material: Brass, e<cept Style G Is Phosphor Bronze Operating Temp Range: -65°C to+125 'C with Gold -65°C to + 105'C with Tin Dielectric Withstanding
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Untitled
Abstract: No abstract text available
Text: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features Ideal for customer premise applications Low standby power consumption: <65 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters:
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Si3232
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Untitled
Abstract: No abstract text available
Text: Kunststoffgehause Data 3A MetalIgehause P lastic-H ousing Data 3A Hetal-Housing Schutzart: IP20 Schutzart: IP67/65 P ro te ctio n le v e l: IP20 P ro te ctio n le v e l: IP67/65 0 6 ,8 P la s tic M10x1 V—;- 54 i ] i— Steckgeometrie RJ45 nach IEC 60603-7
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IP67/65
M10x1
M20x1
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5968-1N5969, 1N6632-1N6637 5 WATT GLASS ZENER DIODES MAXIMUM RATINGS Operating Temperature: -65 to +175°C Storage Temperature: -65 to +200°C Power dissipation 5W @ TL = 25°C, L = 3/8” Power derating 33mW/°C above TL = 25°C, L = 3/8”
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1N5968-1N5969,
1N6632-1N6637
33mW/Â
MIL-PRF-19500,
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spark gap 600v
Abstract: ice3b0365j ice3b0565j
Text: D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3 CoolSET -F3 J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l
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ICE3Bxx65J
spark gap 600v
ice3b0365j
ice3b0565j
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transistor 81 110 w 85
Abstract: PH3135-30M
Text: an AMP =- zE company Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty PH3135-30M 3.1 - 3.5 GHz v2.00 Features l l l l l l l l SJC :22 65, NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry
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PH3135-30M
i-110
lT50MSOA
7xm25B-05
73o5025603
transistor 81 110 w 85
PH3135-30M
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Untitled
Abstract: No abstract text available
Text: P R E L I M I N A R Y AMDB ABSOLUTE MAXIMUM RATINGS the functionality of the device is guaranteed. Storage temperature Am186EM/Am 18 8 E M . -65°C to +125°C Am 186EMLV/Am188EML V .-65°C to +125°C Am186EM/Am188EM Microcontrollers
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Am186EM/Am
186EMLV/Am188EML
Am186/188EM
186/188EMLV.
Am186EM/Am188EM
Am186/188EMLV
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Untitled
Abstract: No abstract text available
Text: Metal-bodied limit switches D! Heavy duty housing For harsh operating environment Robust design of actuator assembly and contact systems Protection class IP 65 Y l l l l Robust contact assembly Guide bushings resistant to wear & tear Large range of actuators
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100/min.
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F0758
Abstract: No abstract text available
Text: Signelics 174S135 Gate Quad Exclusive OR/NO R Gate Product Specification Logic Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL 9ns 65 mA 74S135 FUNCTION TABLE INPUTS ORDERING CODE OUTPUT A B C Y L L H H L L H H L H L H L H L H L L L
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174S135
74S135
N74S135N
50/iA
10Sul
F0758
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ic material
Abstract: No abstract text available
Text: T-1 3/4 5mm HOUSING FOR LED LAMP W53WYP/SEC/H Features l OUTSTANDING l RELIABLE l IC MATERIAL EFFICIENCY. AND RUGGED. HYPER ORANGE Description This devices are made with TS InGaAIP. COMPATIBLE/LOW CURRENT CAPABILITY. l HOUSING l PACKAGE MATERIAL: PPA. : 65 PCS/TUBE.
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W53WYP/SEC/H
DSAD1752
APR/29/2003
W53WYP/SEC
ic material
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Untitled
Abstract: No abstract text available
Text: yjj Supertex inc32-Channel LCD Driver with Separate Backplane Output Ordering Information Package Options Device 44-J Lead Quad Plastic Chip Carrier H V65 44 Lead Quad Plastic Gullwing H V 65 0 6 P J H V 65 0 6 P G T h e H V 65 is a lo w -v o lta g e serial to h ig h -vo lta g e para lle l co nv e rte r
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inc32-Channel
6506X
44-pin
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LT 7250 SE 5100
Abstract: No abstract text available
Text: 5 TO 65 MHz CATV 30 dB HYBRID AMPLIFIER ISG56530 In te l Solutions Grilli FEATURES_ OUTLINE DIMENSIONS U n its in m m [in ch e s] ISG56530 • FLAT GAIN RESPONSE FROM 5 TO 65 MHz (±0.2 dB) 45 08 [1 775] MAX • EXCELLENT RETURN LOSS AND STABILITY OVER
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ISG56530
24-Hour
LT 7250 SE 5100
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Untitled
Abstract: No abstract text available
Text: CONFORMAL COATED RF CHOKES 77F S ERIES Test Miller L±10% Q Freq. Number Min. MHz 77F1R0K 1.0 45 25 77F1R2K 1.2 50 7.9 77F1R5K 1.5 50 7.9 77F1R8K 1.8 55 7.9 77F2R2K 2.2 55 7.9 77F2R7K 2.7 60 7.9 77F3R3K 3.3 65 7.9 77F3R9K 3.9 65 7.9 77F4R7K 4.7 70 7.9 77F5R6K
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77F1R0K
77F1R2K
77F1R5K
77F1R8K
77F2R2K
77F2R7K
77F3R3K
77F3R9K
77F4R7K
77F5R6K
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pt21
Abstract: SPS-281 PT-20 PT-23F PT-23F-HLD ST-24F ST-302 NJL811B sps 606 SPS-103
Text: - 28 4 - € - 200 2 00 5 _ r „ = 2 5 ’C h’— u S.i i is k Ev VCE VcE sit E Ic tr Ic (V ) max iVi mW cm!; (lx) (m A ) tvp 'nnr typ [fisi 1m A ) 10 1.4 1000 65 5 800 1.4 5 10 1000 800 65 _ 10 1000 1 65 1.4 800 2 00 10 P T -7 L 5 - 2 00 10 1.4 - S T -2 4 F
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PT-16
PT-17
PT-23F
PT-18
PT-23F-HLD
PT-28
PT-91
PT-92
PT-93
PT-94
pt21
SPS-281
PT-20
PT-23F
PT-23F-HLD
ST-24F
ST-302
NJL811B
sps 606
SPS-103
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