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    KU 608 Search Results

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    KU 608 Price and Stock

    Pulse Electronics Corporation DPX1608LKU5R2455A

    Signal Conditioning 1608 2.4/5GHz Diplexer TypeU5 Pass Band 2400-2500; 4900-5950 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DPX1608LKU5R2455A 3,970
    • 1 $0.19
    • 10 $0.139
    • 100 $0.096
    • 1000 $0.07
    • 10000 $0.063
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    Pulse Electronics Corporation DPX1608LKU2R2460L

    Signal Conditioning 1608 Wifi 7 2.4G/5-7G DPX TypeU2 Pass Band 2400-2500; 5150-7125 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DPX1608LKU2R2460L 3,970
    • 1 $0.19
    • 10 $0.151
    • 100 $0.116
    • 1000 $0.076
    • 10000 $0.071
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    Vishay Intertechnologies VS-VSKU26/08

    SCRs Input Modules - AAP DBC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VS-VSKU26/08
    • 1 $38.25
    • 10 $32.77
    • 100 $30.36
    • 1000 $30.08
    • 10000 $30.08
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    Vishay Intertechnologies VS-VSKU56/08

    SCR Modules 800 Volt 60 Amp 1256 Amp ITSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VS-VSKU56/08
    • 1 $40.05
    • 10 $35.26
    • 100 $31.66
    • 1000 $31.1
    • 10000 $31.1
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    Belden Inc DRC-0608-220K-UL

    Power Inductors - Leaded Radial Inductor with Leads
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DRC-0608-220K-UL
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    Find more KU 608 price and stock on Findchips.com

    KU 608 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KU608 Unknown Cross Reference Datasheet Scan PDF
    KU608 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KU608 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KU608 Tesla Transistor Scan PDF

    KU 608 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Optiva OTS-2: Ku-Band RF Fiber Optic Transport System DATASHEET | JUNE 2013 SATCOM Ku-Band RF Fiber Optic Transport System System The Optiva OTS-2 Ku-Band transmitter and receiver are ideal to construct downlink 10.700 to 12.750 GHz and uplink 13.750 to 14.500 GHz transparent fiber optic links for antenna remoting,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TFF11096HN Low phase noise LO generator for VSAT applications Rev. 3 — 28 March 2013 Product data sheet 1. General description The TFF11096HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified


    Original     		PDF TFF11096HN TFF11096HN IESS-308 IESS-308

    Untitled

    Abstract: No abstract text available
    Text: Cable Materials Company Hulic Asakusabashi Building, 22-16, Asakusabashi 1-chome, Taito-ku, Tokyo 111-0053, Japan Tel: +81-3-3863-2370 Hitachi Metals Europe GmbH Hitachi Metals Thailand Ltd. Head Office Bangkok Sales Office Immermannstrasse 14-16, 40210 Dusseldorf, Germany


    Original     		PDF PRJ-10

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking

    WLF922

    Abstract: LGA0307-4R7K LGA0410 LGB0606-2R2K LGA0307-151 LGB0606 LGA0410-331K lga0307-101k LGB0405 LGA0307
    Text: TOKEN ELECTRONICS IND. CO., LTD. HONESTY PERFECTION SHARING Catalogue of Inductors And Coils Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang,Taipei Hsien,Taiwan, R.O.C TEL: 886-2-2981 0109 FAX: 886-2-2988 7487 China: 3F South, Zhongxing Industry Bld.,


    Original     		PDF

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    iran

    Abstract: Taiwan Fairply Enterprises 8522 61 60890 Denko
    Text: HEAD OFFICE MITEL SEMICONDUCTOR P.O. Box 13089 360 Legget Drive Kanata, Ont. K2K 1X3 613 592-2122 Fax: (613) 592-6909 SALES OFFICES Japan MITEL SEMICONDUCTOR Shin-Yokohama Daini Center Bldg. 10F 3-19-5 Shin-Yokohama Kohoku-ku Yokohama 222 Japan (81) 45 571 0403


    Original     		PDF

    DL-4146-101

    Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
    Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division


    Original     		PDF

    NE67383

    Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology


    Original     		PDF NE67300 NE67383 NE673 24-Hour NE67383 NE67300 2SK407 NEC NE67300 MESFET 8S222 NEC NE67383

    FLK107XV

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FCSI0598M200

    FET 913

    Abstract: FLK107XV
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FET 913

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FCSI0598M200

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET

    MGF1323

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


    OCR Scan     		PDF MGF1323 MGF1323, 13dBm 30rnA

    Untitled

    Abstract: No abstract text available
    Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­


    OCR Scan     		PDF MGF1923 13dBm 12GHz

    FLK107XV

    Abstract: tc 5082
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band


    OCR Scan     		PDF FLK107XV FLK107XV FCSI0598M200 tc 5082

    NE67383

    Abstract: No abstract text available
    Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300)

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    ku 606

    Abstract: RG604 1506 400-110 RG606 C1000 ku 611 KU 608 C-400
    Text: 1\ three phase métal stocks ponts triphasés métalliques Type* 70 A / / / Tam b / / GD 611 676 C GF 611 676 (C) GJ 611 676 (C) H eatsink Convecteur M ech anical code Code mécanique 110 220 380 RG 604 RG 606 RG 610 6xCB80 546 400 600 1000 110 220 380 KU 1504


    OCR Scan     		PDF 6xCB80 6xP150 6xTNF150 ku 606 RG604 1506 400-110 RG606 C1000 ku 611 KU 608 C-400