KTD10 Search Results

mark A sot-89

Abstract: KTD1003
Contextual Info: SEMICONDUCTOR KTD1003 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark L KTD1003 * Grade A A,B,C Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

KTD1003

Abstract: Transistor hFE CLASSIFICATION Marking CE
Contextual Info: SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A ᴌHigh DC Current Gain C H : hFE=800ᴕ3200. VCE=5.0V, IC=300mA . G J B E ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage DIM A

Contextual Info: SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A ᴌHigh DC Current Gain C H : hFE=800ᴕ3200. VCE=5.0V, IC=300mA . G J B E ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage DIM A

KTB817

Abstract: KTD104 KTD1047
Contextual Info: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD1047. C Recommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 CHARACTERISTIC

KTD1028

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 VCe=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage

transistor KTB817

Abstract: transistor ktd1047 KTB817 KTD1047
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTB817 TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTD1047. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C

transistor KTB817

Abstract: KTD1047 KTD1047c transistor ktd1047 KTB817 ktd10 IC1-A10
Contextual Info: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD1047. C ᴌRecommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 Vce=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VCE(sat)=0.17V (Ic=500mA, IB=5.0mA).

transistor KTB817

Abstract: KTB817 transistor ktd1047 KTD1047
Contextual Info: SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E Complementary to KTD1047. C Recommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 CHARACTERISTIC

KTD1028

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200 Vce=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VCE(sat)=0.17V (Ic=500mA, IB=5.0mA).

d1047

Abstract: transistor d1047 k d1047 KD1047 transistor d1047 -diagrama transistor d1047 -voltaje D1047Y d1047 -diagrama KTD1047 TO-3PN
Contextual Info: SEMICONDUCTOR KTD1047 MARKING SPECIFICATION TO-3P N PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1047 Y 816 No. Item Marking 1 KEC K KEC CORP. 2 Device Name D1047 KTD1047 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No : 00 Description

transistor ktd1047

Abstract: KTB817 KTD1047
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1047 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB817. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C

KTD1003

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~3200. VcE=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage

D1028

Abstract: TO-92L hFE kec KTD1028 D10-28 DSA0010554
Contextual Info: SEMICONDUCTOR KTD1028 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name D1028 KTD1028 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

Contextual Info: SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES 2011. 3. 18 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTD1047B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING

KTD1003

Abstract: KEC SOT89
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain : hFE=800~ 3200. VcE=5.0V, Ic=300mA . • Wide Area of Safe Operation. • Low Collector Saturation Voltage : VcEfeat)=0.17V(Ic=500mA, IB=5.0mA).

transistor ktd1047

Abstract: KTB817 KTD1047
Contextual Info: SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E ᴌComplementary to KTB817. C ᴌRecommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC

KTB817b

Contextual Info: SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES ・Complementary to KTB817B. B Q K F ・Recommended for 60W Audio Frequency R G H I C J Amplifier Output Stage. D MAXIMUM RATING Ta=25℃

transistor ktd1047

Abstract: KTD1047 KTB817 IC24L
Contextual Info: SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB817. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage

KTD1028

Contextual Info: SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B FEATURES D ᴌHigh DC Current Gain A : hFE=800ᴕ3200 VCE=5.0V, IC=300mA . ᴌWide Area of Safe Operation. P DEPTH:0.2 ᴌLow Collector Saturation Voltage. C

KTD1047

Abstract: transistor ktd1047 transistor KTB817 KTB817
Contextual Info: SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTB817. C ᴌRecommended for 60W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC

Contextual Info: DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTD Series RoHS Compliant ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is available. 2. Temperature characteristic is X7R in EIA code. 3. Superior humidity characteristic and long life.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)