KRA10 Search Results

KRA102S

Abstract: kra102s equivalent KRA102 2ndyear
Contextual Info: SEMICONDUCTOR KRA102S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PB 1 2 Item Marking Description Device Mark PB KRA102S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA107M

Abstract: KRA108M KRA109M
Contextual Info: SEMICONDUCTOR KRA107M~KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES A With Built-in Bias Resistors O F Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

KRA107

Abstract: KRA108 KRA109
Contextual Info: SEMICONDUCTOR KRA107~KRA109 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C ・With Built-in Bias Resistors A ・Simplify Circuit Design ・Reduce a Quantity of Parts and Manufacturing Process

A106M

Abstract: transistor A106M 106M KRA101M KRA102M KRA103M KRA104M KRA105M KRA106M kra+103+m
Contextual Info: KRAIOIMSEMICONDUCTOR KRA106M TECHNICAL DATA e p it a x ia l p la n a r pnp t r a n s i s t o r SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

kra10

Contextual Info: SEMICONDUCTOR KRA101~KRA106 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2011. 6. 14 Revision No : 1 1/6

r2kl

Abstract: KRA105M KRA102M 104M 106M KRA101M KRA103M KRA104M KRA106M
Contextual Info: SEMICONDUCTOR KRA101M~KRA106M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES A With Built-in Bias Resistors. O F Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

TRANSISTOR A107m

Abstract: transistor TT 3034 equivalent transistor TT 3034 a107m TT 3034 transistor A109M KRA107M KRA108M KRA109M
Contextual Info: KOREA ELECTRONICS CO.,LTD. KRA107MSEMICONDUCTOR KRA109M EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA107M-KRA109M

Contextual Info: SEM ICO NDUCTO R KRA107M-KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SW IT C H IN G A PPLICATION. IN TERFA CE CIR C U IT A N D DRIVER C IR C U IT APPLIC A TIO N . FEA T U R E S • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SEMICONDUCTOR KRA107~KRA109 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C A ・With Built-in Bias Resistors ・Simplify Circuit Design ・Reduce a Quantity of Parts and Manufacturing Process

PJ SOT23

Abstract: KRA109S
Contextual Info: SEMICONDUCTOR KRA109S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PJ 1 2 Item Marking Description Device Mark PJ KRA109S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA107S

Contextual Info: SEMICONDUCTOR KRA107S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PH 1 2 Item Marking Description Device Mark PH KRA107S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA106S

Contextual Info: SEMICONDUCTOR KRA106S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA106S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA108S

Contextual Info: SEMICONDUCTOR KRA108S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PI 1 2 Item Marking Description Device Mark PI KRA108S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

106S

Abstract: KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S EJ transistor marking sot23
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KRA101SKRA106S EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA107S

Abstract: KRA108S KRA109S
Contextual Info: KRA107SSEMICONDUCTOR KRA109S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

KRA101S

Contextual Info: SEMICONDUCTOR KRA101S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PA 1 2 Item Marking Description Device Mark PA KRA101S hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA103S

Contextual Info: SEMICONDUCTOR KRA103S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PC 1 2 Item Marking Description Device Mark PC KRA103S hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KRA101M~KRA106M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B A FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA107~KRA109 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2011. 6. 14 Revision No : 1 1/4

KRA107M-KRA109M

Abstract: KRA107M KRA108M KRA109M
Contextual Info: SEMICONDUCTOR KRA107M~KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES A ᴌWith Built-in Bias Resistors O F ᴌSimplify Circuit Design ᴌReduce a Quantity of Parts and Manufacturing Process

pj 88

Abstract: KRA107S KRA108S KRA109S
Contextual Info: SEMICONDUCTOR KRA107S~KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E B L L ᴌWith Built-in Bias Resistors. ᴌReduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA107S~KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B L L FEATURES ・Simplify Circuit Design. D ・With Built-in Bias Resistors. 2 H A 3 G ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: KRA100S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 100 Load Current Max. (A)200m Drop-Out Volt Max. P(D) Max. (W)20 Nom. Supp (V) Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule

Contextual Info: SEMICONDUCTOR KRA107M~KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES A ・With Built-in Bias Resistors O F ・Simplify Circuit Design ・Reduce a Quantity of Parts and Manufacturing Process