M5M23160
Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1
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16-Meg
MSM5116160
MSM5116400
MSM5117100
MSM5117400
MSM5117800
MSM51V16100
MSM51V16160
MSM51V16400
MSM51V17100
M5M23160
TC5117400
oki cross
kmm5322000a
THM324080AS
lh538000
424100
IBM025161
MC-421000A36
uPD482445
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
84000A
41C4000AJ
20-pin
30-pin
130ns
84000A-
150ns
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KMM584000
Abstract: KM41C4000J
Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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M584000
KMM584000-8
KMM584000-10
100ns
150ns
180ns
KMM584000
KM41C4000J
20-pin
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KMM584000A
Abstract: km41c4000aj
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
KMM584000A
KM41C4000AJ
20-pin
30-pin
KMM584000A-
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Untitled
Abstract: No abstract text available
Text: SA MS UN G E L E C T R O N I C S INC 42E D B 7^4142 KMM584000 00104bb Ô DRAM MODULES 4 Mx 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM584000 Is a 4M b l t x 8 D ynam ic RAM high d e n sity m em ory m odule. The S am sung
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KMM584000
00104bb
KMM584000
KM41C4000J
20-pln
30-pin
150ns
100ns
KMM584000-10
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
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1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
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4Mx8 dram simm
Abstract: KM41C4000CJ
Text: DRAM MODULE 4 Mega Byte KMM584000C1 Fast Page Mode 4Mx8 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM584000C1 is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584000C1 consists of eight CMOS 4Mx1bit DRAMs in 20-pin SOJ packages mounted on
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KMM584000C1
20-pin
30-pin
4Mx8 dram simm
KM41C4000CJ
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KM41C4000A
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM584000A
KMM584000A
KM41C4000AJ
20-pin
30-pin
KMM584000A-
130ns
150ns
KM41C4000A
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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PDF
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KMM584000A
84000A-
84000A-10
100ns
130ns
150ns
180ns
84000A
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KMM584000A7
Abstract: No abstract text available
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM M 584000A- 8 80ns 20ns 150ns K M M 584000A -10 100ns 25ns 180ns KM M 584000A- 7 • • • • • • •
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KMM584000A
84000A-
84000A
100ns
130ns
150ns
180ns
KMM584000A7
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M5916
Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5
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11Mx9
KMM581000C
KMM584Q0
KMM594000C-5
HKMM58100
KMM591000CN-7
M584Q00C-6
jKMM59400QC-6
KMM533100
KMM5361000C2/C2G
M5916
533410
M5402
KMM591000CN-7
KMM5334100
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM584000B
KMM584000B
KM41C4000BJ
20-pin
30-pin
22/iF
KMM584000B-6
110ns
M584000B-7
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30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM
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KMM58256CN
KMM59256CN
KMM532256CV/CVG
KMM536256C/CG
KMM32512CV/CVG
KMM536512C/CG
KMM536512CH
KMM540512C/CG'
KMM540512CM
KMM581000C
30 pin simm
30-pin SIMM RAM
30 pin simm memory
256KX8 SIMM
512KX40
1 x 32 72-pin SIMM
KMM581020BN
72 simm function
KMM5362000
30-pin SIMM
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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KM41C4000AJ
Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1
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KM41C4000J
KM41C4000Z
41C4000U
KM41C4000LZ
KM41C4001J
KM41C40012
KM41C4002J
KM41C40022
KM44C1OOOJ
KM44C1000Z
KM41C4000AJ
KM44C1000AZ
"30 pin simm"
KMM584000A
KM41C4001AZ
1Mx4 SOJ
1Mx4 nibble
4Mx1 nibble
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DYNAMIC RAM CROSS REFERENCE
Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102
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KM41C4000
KM41C4001
KM41C4002
KM44C1000
KM44C1002
TC514100
TC514101
TC514102
TC514400
TC514402
DYNAMIC RAM CROSS REFERENCE
KMM5362000
KMM53220
KMM581000
KMM532200
THMS361020
KMM591000
MC-422000A36
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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SIMM 1Mx9 30pin
Abstract: simm EDO 72pin KMM51442100ATG KMM532
Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16
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1Mx32
1Mx33
1Mx36
KMM581000CN
KMM5B1020CN
KMM591000CN
KMM591020CN
KMM5321000CV/CVG
KMM5331000C/CG
KMM5361000C2/C2G
SIMM 1Mx9 30pin
simm EDO 72pin
KMM51442100ATG
KMM532
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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OCR Scan
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PDF
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KM41C256P
KM41C255J
KM41C258Z
KM41C257P
KM41C257J
KM41C257Z
KM41C25BP
KM41C258J
KM41C464P
KM424C256Z
KM41C464
PB20
KM64258
KM68512
KMM5362000
KM23C2
64k 30-pin SIMM
KM23C4000A
KM41C4000BJ
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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OCR Scan
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PDF
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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KMM591000AN8
Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
Text: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10
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OCR Scan
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KMM58100QAN-7
KMM58100QAN-8
KMM581000AN-10
KMM591000AN-7
KMM591000AN-8
KMM591000AN-10
KMM584000A-7
KMM584000A-8
KMM584000A-10
KMM594000A-7
KMM591000AN8
KMM591000AN
KMM591000AN-7
AG10
KMM591000AN10
kmm5322000av
KMM591000
A1G10
KMM5362000A
KMM584000A
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