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    KMM5 Price and Stock

    Vishay Intertechnologies CWR06KC106KM/M5

    CAP 10UF 25VDC 10% 6.73 X 2.79 X 2.79MM SMD 1% - Bulk (Alt: CWR06KC106KM/M5)
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    Avnet Americas CWR06KC106KM/M5 Bulk 14 Weeks 60
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    United Chemi-Con Inc EKMM500VSN103MA40S

    Aluminum Electrolytic Capacitors - Snap In 10000uF 50 Volt
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    Mouser Electronics EKMM500VSN103MA40S
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    Samsung Semiconductor KMM5324104BK-6U

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    Bristol Electronics KMM5324104BK-6U 4
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    Samsung Semiconductor KMM5362000BG-7

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    Bristol Electronics KMM5362000BG-7 4
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    Samsung Semiconductor KMM591000BN-6

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    Bristol Electronics KMM591000BN-6 2
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    Find more KMM5 price and stock on Findchips.com

    KMM5 Datasheets (263)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM5.1 Kexin Zener Diodes Original PDF
    KMM51 Kexin Zener Diodes Original PDF
    KMM511024-12 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511024-15 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511025-12 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511025-15 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM5321000BV-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321200AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    ...

    KMM5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368005CSW/CSWG 8Mx36 4Mx16 KMM5368005CSW/CSWG KMM5368005C 8Mx36bits

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


    OCR Scan     		PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

    Untitled

    Abstract: No abstract text available
    Text: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8


    OCR Scan     		PDF KMM5404000/G 4MK40 110ns KMM5404000-7 130ns KMM5404000-8 150ns KMM5404000-6 KMM5404000

    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		PDF KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns


    OCR Scan     		PDF KM536512W/WG 512KX36 KMM536512W-6 110ns 130ns KMM536512W-8 150ns KMM536512W KMM536512WG:

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • T T b H l H S 0 0 1 5 3 1 0 13T I SPIGK KMM5368000H/HG DRAM MODULES 8Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5368000H is a 8 M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5368000H/HG 8Mx36 KMM5368000H 24-pin 72-pin 110ns KMM5368000H-7 130ns KMM5368000H-8

    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit


    OCR Scan     		PDF KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    KMM581000N8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs


    OCR Scan     		PDF KMM581000N 0Q10434 KMM581000N KM44C1000J-1M 20-pin 30-pin KMM581000N-8 150ns KMM581000N-10 KMM581000N8

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E 3 WÊ 7 ^ b 4 m 2 DGlSeflG b7E • SMGK DRAM MODULES KMM5364000H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: KMM5364000H-6 • • • • • • • tflA C tcA C Í rc 60ns 15ns


    OCR Scan     		PDF KMM5364000H/HG KMM5364000H-6 M5364000H-7 130ns KMM5364000H-8 KMM5364000H 24-pin 72-pin 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 7Tfcj4142 KMM581000AN 581000AN 81000A KM44C1OOOAJ 20-pin 30-pin 581000AN- 130ns

    KMM5322000BV

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7


    OCR Scan     		PDF KMM5322000BV/BVG M5322000BV-6 M5322000B KMM5322000BV 20-pin 72-pin 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5328004BK/BKG KMM5328104BK/BKG KMM5328104BK/BKG 8Mx32 KMM53280 KMM5328004BK cycles/64ms KMM5328004BKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • C ha n g ed m odule P C B from 6 -L a ye r to 4-Layer. • C ha n g ed M odule Part No. from K M M 5 3 6 2 2 0 3 C W /C W G to K M M 5 3 6 2 2 0 3 C 2 W /C 2 W G caused by P C B revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203C2W/C2WG

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0B GülQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung


    OCR Scan     		PDF KMM5910Q0B lQ42b KM41C1OOOBJ 20-pin 30-pin 591000B- 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns


    OCR Scan     		PDF KMM5328000V/VG/VP 8Mx32 KMM5328000V-6 110ns 130ns KMM5328000V-8 KMM5328000V-7 KMM5328000V bitsx36