Untitled
Abstract: No abstract text available
Text: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE 2Mx64 SODIMM 2MX8 Base Revision 2.0 November 1997 -1- Rev. 2.0 (Nov. 1997) KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE Revision History Version 2.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.
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KMM466F203CS2-L
KMM466F213CS2-L
2Mx64
KMM466F213CS2-L
KMM466F20
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Untitled
Abstract: No abstract text available
Text: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2Mx8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic RAM high density memory module. The Samsung
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KMM466F203CS2-L
KMM466F213CS2-L
KMM466F213CS2-L
KMM466F20
2Mx64bits
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The
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KMM466F203BS-L
KMM466F213BS-L
KMM466F213BS-L
2Mx64
KMM466F20
cycles/128ms,
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS1 -L KMM466F213BS1 -L DRAM MODULE KMM466F203BS1-L & KMM466F213BS1-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T he S am sung K M M 4 6 6 F 2 0 1 3 B S 1 -L is a 2M x6 4 b its D ynam ic
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KMM466F203BS1
KMM466F213BS1
KMM466F203BS1-L
KMM466F213BS1-L
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Untitled
Abstract: No abstract text available
Text: KMM466F203CS1 -L KMM466F213CS1 -L DRAM MODULE KMM466F203CS1-L & KMM466F213CS1-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T he S am su ng KM M 466F20 1 3CS1 -L is a 2 M x6 4 b its D ynam ic
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KMM466F203CS1
KMM466F213CS1
KMM466F203CS1-L
KMM466F213CS1-L
466F20
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km48v2104bs
Abstract: No abstract text available
Text: KMM466F203BS1-L D R A M Mo d ul e ELECTRONICS KMM466F203BS1 -L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS1-L is a 2M bit x 64 Dynamic RAM high density memory module. The
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KMM466F203BS1-L
KMM466F203BS1
KMM466F213BS-L
2Mx64
KMM466F20
28-pin
300mil
144-pin
km48v2104bs
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Untitled
Abstract: No abstract text available
Text: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic Part Identification
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KMM466F203CS2-L
KMM466F213CS2-L
KMM466F213CS2-L
KMM466F20
2Mx64bits
466F203CS2-L
cycles/128ms,
466F20
466F213CS2-L
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F20 1 3BS-L is a 2M bit x
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KMM466F203BS-L
KMM466F213BS-L
KMM466F203BS-L
KMM466F213BS-L
2Mx64
KMM466F20
28-pin
300mil
144-pin
466F203BS-L
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samsung 203c
Abstract: No abstract text available
Text: KM M 4 6 6 F 2 0 3 C S 2 - L KM M466F2 1 3CS2-L DRAM MODULE KM M 46 6F 20 3C S 2- L & KMM4 66F 21 3CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh F E A TU RE S G E N E R A L DESCRI PTI ON • Part Identification
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M466F2
466F20
2Mx64bits
144-pin
KMM466F20
KMM466F203CS2-L
466F213CS2-L
samsung 203c
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
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2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
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1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
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1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
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KMM364C12
Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for
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