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    Abstract: No abstract text available
    Text: KM791001J CMOS SRAM 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.) KM791001J-15:180mA (Max.) KM791001J-20:150mA (Max.)


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    PDF KM791001J KM791001J-12: 200mA KM791001J-15 180mA KM791001J-20 150mA KM791001J

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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 0 0 1 7 7 3 5 Tlô I SMfiK C M O S SRAM KM 791001J 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.)


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    PDF 791001J KM791001J-12: 200mA KM791001J-15: 180mA KM791001J-20: 150mA KM791001J KM791001J OD17741