KM64B1003J Search Results

KM64B1003J-10

Abstract: KM64B1003J-12 KM64B1003J-15
Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8: 165 mA(Max.) KM64B1003J-10: 155 mA(Max.)

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8:165 mA(Max.) KM64B1003J-10:155 mA(Max.)

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With UE High-Speed BiCMOS Static RAM The KM 64B1003 is a1,048,576-bit high-speed static random access memory organized as 262,144 words by 4 bits. The KM 64B1003 uses four com m on input and output lines and has an output enable pin w hich operates

KM68B1003

Contextual Info: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input

Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CM O S): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

KM64B1003J-10

Abstract: KM64B1003J-12 KM64B1003J-15
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • VTbHme □□17tti2 DbS SMGK KM64B1003_ BiCMOS SRAM 262,144 WORD X 4 Bit With ÖE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.)

pin diagram of 7414

Abstract: KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414
Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D 7^142 KM64B1003 □□17bb2 DhS «SrißK BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation

Contextual Info: KM64B1003 BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10 ,12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)