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    KM64B1003J Search Results

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    KM64B1003J Price and Stock

    SAMSUNG REFURB KM64B1003J-10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM64B1003J-10 1,251 2
    • 1 -
    • 10 $2.6936
    • 100 $1.934
    • 1000 $1.699
    • 10000 $1.699
    		Buy Now
    Quest Components KM64B1003J-10 1,000
    • 1 $5.55
    • 10 $5.55
    • 100 $5.55
    • 1000 $2.22
    • 10000 $2.22
    		Buy Now

    Samsung Semiconductor KM64B1003J-10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM64B1003J-10 148
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM64B1003J-12

    IC,SRAM,256KX4,BICMOS-TTL,SOJ,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM64B1003J-12 964
    • 1 $4.5
    • 10 $4.5
    • 100 $1.95
    • 1000 $1.8
    • 10000 $1.8
    		Buy Now

    KM64B1003J Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM64B1003J-10 Samsung Electronics 256K x 4-Bit High Speed BiCMOS Static RAM Scan PDF
    KM64B1003J-12 Samsung Electronics 256K x 4-Bit High Speed BiCMOS Static RAM Scan PDF
    KM64B1003J-15 Samsung Electronics 256K x 4-Bit High Speed BiCMOS Static RAM Scan PDF
    KM64B1003J-8 Samsung Electronics 256K x 4-Bit High Speed BiCMOS Static RAM Scan PDF

    KM64B1003J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    km681001j-20

    Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
    Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ


    Original     		AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20 PDF

    KM64B1003J-10

    Abstract: KM64B1003J-12 KM64B1003J-15
    Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8: 165 mA(Max.) KM64B1003J-10: 155 mA(Max.)


    OCR Scan     		KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10: KM64B1003J-12: KM64B1003J-15: 135mA KM64B1003J 32-SQJ-400 KM64B1003 KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8:165 mA(Max.) KM64B1003J-10:155 mA(Max.)


    OCR Scan     		KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10 KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SOJ-4QO KM64B1003 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)


    OCR Scan     		KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10: KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SCU-400 KM64B1003 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With UE High-Speed BiCMOS Static RAM The KM 64B1003 is a1,048,576-bit high-speed static random access memory organized as 262,144 words by 4 bits. The KM 64B1003 uses four com m on input and output lines and has an output enable pin w hich operates


    OCR Scan     		KM64B1003 256Kx4 KM64B1003J- 64B1003J-10: KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SOJ-400 64B1003 576-bit PDF

    KM68B1003

    Abstract: No abstract text available
    Text: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input


    OCR Scan     		KM64B1003 576-bit 400mil 32-pin KM64B1003 KM68B1003 PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CM O S): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J: PDF

    KM64B1003J-10

    Abstract: KM64B1003J-12 KM64B1003J-15
    Text: SAMSUNG ELECTRONICS INC b7E D • VTbHme □□17tti2 DbS SMGK KM64B1003_ BiCMOS SRAM 262,144 WORD X 4 Bit With ÖE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.)


    OCR Scan     		KM64B1003 DD17bh2 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 PDF

    pin diagram of 7414

    Abstract: KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J pin diagram of 7414 KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D 7^142 KM64B1003 □□17bb2 DhS «SrißK BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation


    OCR Scan     		KM64B1003 17bb2 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B1003 BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10 ,12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA KM64B1003J PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)


    OCR Scan     		KM64B1003 KM6481003J-8: 165mA KM64B1003J-10: 155mA KM64B1003J-12: 145mA KM64B1003J-15: 135mA 1003J: PDF