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    44v100

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10


    OCR Scan     		PDF KM44V1000BLL 130ns KM44V1000BLL-8 150ns KM44V1000BLL-10 100ns 180ns KM44V1000BLL-7 cycles/128ms 20-LEAD 44v100

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10 100ns 25ns 180ns KM44V1000BLL-7 • • • • •


    OCR Scan     		PDF KM44V1000BLL KM44V1000BLL-7 KM44V1000BLL-8 KM44V1000BLL-10 100ns 130ns 150ns 180ns KM44V1000BLL

    KM48V512ALLZ

    Abstract: 28-pin SOJ 512KX9 512KX8 KM49C512AT
    Text: FUNCTION GUIDE MEMORY ICs D y n a m ic R A M Continued Capacity 4 M B /W Part Number Organization Speed(ns) Technology Features Packages Remark Now * KM44V1000BLV 1M x4 70/80 CMOS Fast Page(3.3V) 20 PinTSOP-l(Forward) * KM44V1000BLVR 1M x4 70/80 CMOS Fast Page(3.3V)


    OCR Scan     		PDF KM44V1000BLV KM44V1000BLVR KM44V1000BLLP KM44V1000BLLJ KM44V1000BLLZ KM44V1000BLLT KM44V1000BLLTR KM44V1000BLLV KM44V1000BLLVR KM48C512AJ KM48V512ALLZ 28-pin SOJ 512KX9 512KX8 KM49C512AT