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    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C4001B 110ns 130ns 150ns KM41C4001B 304x1 KM41C4001B-6 KM41C4001BPACKAGE PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


    OCR Scan     		KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD PDF

    KM44C1000BJ

    Abstract: 4Mx1 4Mx1 nibble
    Text: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ


    OCR Scan     		KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble PDF