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KM23C8001B Abstract: KM23C8001 Text: KM23C8001B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 x 8 bit organization	OCR Scan	PDF	KM23C8001B 100ns 32-DIP KM23V8001BG KM23C8001B) KM23C8001BG) KM23C8001
Untitled Abstract: No abstract text available Text: SAM S UN G E L E C T R O N I C S INC b?E D • 7 1 b 4 1 4 B 0 0 1 7 05 1 0=54 ■ SMGK PRELIMINARY CMOS MASK ROM KM23V8001 B G 8M-Bit (1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,046,576 x 8 bit organization • Fast access tim e: 150ns(max.)	OCR Scan	PDF	KM23V8001 150ns 32-pin, 600mil, 525mil, KM23V8001B DD17DSS KM23V8001B)
KM23C8001B Abstract: No abstract text available Text: S A M S U N G E L E C T R O N I C S INC b7E D • 7%H1HS KM23C8001 B G 0 0 17 Q4 7 3b3 « S f l S K CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using	OCR Scan	PDF	KM23C8001 KM23C8001B 100ns 32-pin, KM23C8001B) KM23C8001BG)
kje t9 Abstract: No abstract text available Text: PRELIMINARY KM23V8001 B G CMOS MASK ROM 8M-Bit 1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 1,048,576 X 8 bit organization Fast access time : 150ns(max.) Supply voltage : single+3V or +3.3V Current consumption Operating : 25 mA(max.) at VCC=3.0V± 0.3	OCR Scan	PDF	KM23V8001 150ns 32-pin, 600mil, 525mil, KM23V8001B KM23V8001B) kje t9