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41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	PDF	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	PDF	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
KM23C2100FP Abstract: No abstract text available Text: KM23C2100 CMOS MASK ROM 2M-Bit 256Kx8/128Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	PDF	KM23C2100 256Kx8/128Kx16) 150ns 100/iA 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) KM23C2100FP
23c2100 Abstract: No abstract text available Text: KM23C2100 CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchabie organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	PDF	KM23C2100 8/128K 150ns 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) 23c2100
Untitled Abstract: No abstract text available Text: CMOS MASK ROM KM23C2100 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES T h e K M 23C 2100 is a fu lly s ta tic m a s k p ro g ra m m a b le • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.)	OCR Scan	PDF	KM23C2100 8/128K 150ns 100/jA 40-pin 44-pin KM23C2100) KM23C2100FP)