KL 05 DIODE Search Results

Contextual Info: & «cc M OTOROLA ^ ^ ^ ^ SN54LS00 SN74LS00 ^ ra rn Fl Fl RI FI Fl Q U AD 2-IN P U T N A N D GATE LOW POWER SCHOTTKY vÙ ^ klü 'iiJ^ jd A ^ iJ Ll I J Suffix — Case 632-07 {Ceramic N Suffix — Case 646-05 (Plastic) GUARANTEED OPERATING RANGES SYMBOL PARAMETER

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

kl 05 diode

Abstract: HB77
Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 $11 <<1 + + 0011

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

SKM300GB123D

Contextual Info: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ .  + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 /  &( 4 /1 C  AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +

smd diode schottky code marking 2U

Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Contextual Info: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/

uPD6120

Abstract: npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102
Contextual Info: MOS DIGITAL INTEGRATED CIRCU IT /¿ P D 6 1 2 0 M U L T I- P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R IC C M O S LSI D ESCRIPTIO N The pPD6120 is an LSI for the transmission of general-purpose, infrared, remote control codes to TV s, V TR s, audio equip­

6122G0

Abstract: NEC PD6121 455b kl diode 03 IC-6316B mpd 6120
Contextual Info: MOS INTEGRATED CIRCUIT M P D 6 1 2 2 M U L T I-P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R 1C C M O S LSI DESCRIPTION The //PD6122 is an infrared remote control transmitter LSI for T V , V CR , stereo components, cassette decks, air con­

Amplifier 1000w schematic diagrams

Abstract: 1000w audio amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram 1000w power amplifier circuit diagram 500w audio amplifier circuit diagram 1000W MOSFET Audio Amplifier Circuit 1000w Mosfet Power Audio Amplifier circuit Diagram 12v 1000W AUDIO AMPLIFIER 1000W power amplifier schematic diagrams
Contextual Info: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TDA2500-1 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.0 May 2005 GENERAL DESCRIPTION The RB-TDA2500 reference board is based on the TDA2500 digital audio power amplifier driver from

Contextual Info: SKiM 601GD126DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

Sj 33 diode

Contextual Info: T O SH IB A 1 SV 217 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 C ATV TUN IN G . U nit in mm • High Capacitance Ratio : C 2 V / C 25 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 0.2 + 1.25 - 0.

Contextual Info: SEMiX 352GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  - -34 6 "8*       ' /,  !  +  93$-9: ;   Values Units +', 01, '2, 5, 7 ',  5, <<< = +(, +'(  $ $  ) 5,  '1, +/, 5, $ $ +2, $ $* +  < Inverse diode

bzx 79 6v2

Abstract: zener BZX 4v7 BZX 6v3 zener BZX 5V1 25CC zener BZX 3V6 zener BZX 79 4v7 79C5V6 bzx79 79C2V7
Contextual Info: SbE D • 7^2^237 OOMlSfll ôbO ■ S G T H £jï T -u ~ a S G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 2.4V TO 100V ■ DOUBLE SLUG TYPE CONSTRUCTION ■ PRO ELECTRON REGISTRATION 2.4V TO 100V ■ CECC FOR TYPES : 2.7V TO 62V LEVEL QUALITY ASSESSM ENT : L

Contextual Info: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V

Contextual Info: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

LM 364 pn

Contextual Info: LED HIGH POWER M08 Product Series LED HIGH POWER M08 CoB Product Data Sheet Created Date: 08 / 22 / 2013 Revision: 5.0, 03 /25 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M08 Product Series 1. Description The LiteON CoB Product series is a revolutionary, energy efficient and ultra-compact new light source, combining the

phillips zener

Abstract: Leach relay M83536
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

2SK2385

Abstract: S2510
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive

1SV149

Contextual Info: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V

Contextual Info: LED HIGH POWER M07 Product Series LED HIGH POWER M07 CoB Product Series Data Sheet Created Date: 10 / 30 / 2013 Revision: 1.0, 12 / 10 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M07 Product Series 1. Description

BTY230

Abstract: a2kl
Contextual Info: r z 7 SGS-THOMSON BYT230PI V -800 BYT231 PI(V)-800 FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 Vrms Capacitance = 45 pF

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 6 3 , 6 3 A , 6 4 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION Equipped w ith low -voltage 1.8 V operation, a carrier generation circu it for infrared rem ote control transm ission,