KJE transistor
Abstract: No abstract text available
Text: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.
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OT-89
023b32G
KJE transistor
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Untitled
Abstract: No abstract text available
Text: BAV99 vtsM A Y ▼ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast sw itching speed • High conductance • Surface m ount package autom atic insertion • C onnected in series ideally suited for 94 8550 Absolute Maximum Ratings Tj = 25°C
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BAV99
D-74025
17-Mar-99
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ts0524lb
Abstract: ts0524 TS0524LB-X SMU FM IC TS-0524
Text: P r o d u c t U p d a t e F i l e Permeability Sensing Type / Piezoelectric Type Toner-Concentration and Toner-Level Sensors jfiJSRoHSJB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , T S J S P s . e a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).
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2002/95/EC,
0to50oC
ts0524lb
ts0524
TS0524LB-X
SMU FM IC
TS-0524
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60c31
Abstract: 4kx8 rom 60C51 80C31 80C51 33jp TA-035
Text: DMC 60C51/31 CMOS SNGLE-COM PONENT 8-B IT MICROCOMPUTER □ FEATURES o 8 bit CPU optimized for control applications, o Power control modes. o Ph-to-pin compatible with intel’s 80C51/ 80C31 o 60C51 Low power mask programmable ROM o 60C31 Low power CPU only
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60C51/31
80C51/
80C31
60C51
60C31
12MHz
40DIP
44PLCC
4kx8 rom
80C31
80C51
33jp
TA-035
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AM29F040B
Abstract: No abstract text available
Text: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology
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Am29F040B
Am29F040
AM29F040B
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Untitled
Abstract: No abstract text available
Text: NJ U 6 4 3 6 PRELIMINARY 1/4 DUTY LCD D R I V E R W I T H GENERAL DESCRIPTION The NJU6436 is a 1/4 duty LCD driver for segment type LCD panel with key scanning, Ir receiving and LED driv ing function. The LCD driver consists of 4-common and 60-segnent drives up to 240 segments and LED driver drives 1 LED
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NJU6436
60-segnent
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W157
Abstract: mn 6912 bc 5578 Nanjing Micro One Electronics
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.SA Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL : 408-954-7000 FAX : 408-954-7883 300 Park Boulevard, Suite #210 Itasca, IL 60143-2636 TEL : 630-775-1050 FAX : 630-775-1058 238 Littleton Rd. Suite 201
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KS 110 16 X 2 LCD Panel Display
Abstract: No abstract text available
Text: NJ U6 4 3 6 PRELI Ml NARY 1 / 4 DUTY LCD DRIVER WITH KEY SCAN GENERAL DESCRIPTION • PACKAGE OUTLINE The NJU6436 is a 1/4 duty LCD driver for segment type LCD panel with key scanning, Ir receiving and LED driv ing function. The LCD driver consists of 4-common and 60-segment
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NJU6436
60-segment
KS 110 16 X 2 LCD Panel Display
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LH536
Abstract: AS29X 29LV002-150 kje z1
Text: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip
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AS29LV
002T-100PI
002B-100LI
AS29LVQQ2T-I0QLI
32-pin
02T-80PC
AS29LV002B-80LC
S29IV
LH536
AS29X
29LV002-150
kje z1
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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MT58LC128K18B4,
MT58LC64K32B4,
MT58LC64K36B4;
MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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MT58L256L18F,
MT58L128L32F,
MT58L128L36F;
MT58L256V18F,
MT58L128V32F,
MT58L128V36F
MT58L256L18F
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Untitled
Abstract: No abstract text available
Text: l U II^ E a r n iM I 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b S Y N C B U R S T S S R A M 3.3V Vdd, 3.3V I/O, Flow-Through S P MT58L32L32F' FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd
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S1998
Abstract: .5555b AS29F040 29F040-70
Text: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current
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512KX8
5S/70/90/120/150
32-pin
AS29F040-5STC
AS29F040-70TC
AS29F040-70TI
AS29F040-90TC
AS29F040-90TI
S1998
.5555b
AS29F040
29F040-70
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ck 66 ul94v-0 lcd
Abstract: ESCC3009 03028-BP TAJB SHAPE lct thyristor M28861/05 CECC 30701-007 3001 8AT electrolytic capacitor 2200 micro farad 63V M28861/01-016TB
Text: HIGH RELIABILITY www.avx.com AVX Ultimate Guide to Enhanced and High Reliability Components ADVANCED Passives & interconnect Version 7.1 AVX is the leading manufacturer of established and high reliability passive and interconnect components. We can offer a broad
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AS9100,
TS16949-2002
ISO9001-2000.
M307-N
ck 66 ul94v-0 lcd
ESCC3009
03028-BP
TAJB SHAPE
lct thyristor
M28861/05
CECC 30701-007
3001 8AT
electrolytic capacitor 2200 micro farad 63V
M28861/01-016TB
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stk 8770
Abstract: KJE 6A Siemens Digital Book SAK-C167CR-16R33M Infineon saf-c167cr-lm C167 siemens MDL 3088 3800P KJE T5
Text: Data Sheet V3.0, April. 2000 C167CR C167SR 1NFNSOS040 1 6-Bit Single-Chip IR IM R E s H I M i c r o c o jf t r o t i « *' Microcontrollers Infineon N e v e r s t o p t INFNS05040 Edition 2000-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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C167CR
C167SR
1NFNSOS040
INFNS05040
D-81541
-X-76oo
DA04002.
stk 8770
KJE 6A
Siemens Digital Book
SAK-C167CR-16R33M
Infineon saf-c167cr-lm
C167 siemens
MDL 3088
3800P
KJE T5
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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TRANSISTOR SMD T1P
Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
Text: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products
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accuram29C676
07606C
Am7202A
Am7203A
Am7204A
Am7205A
TRANSISTOR SMD T1P
schematic computer 80386
chip mother board sis 662
NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS
80486 microprocessor circuit diagram
SmD TRANSISTOR a77
SMD Transistor jly
PALCE16V8-10
ksp 13 f10
ksp 13 replacement
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