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    AS29LV Search Results

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    AS29LV Price and Stock

    Alliance Semiconductor Corporation AS29LV800B-90TC

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    Bristol Electronics AS29LV800B-90TC 9
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    Alliance Semiconductor Corporation AS29LV800B-80TC

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    Quest Components AS29LV800B-80TC 60
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    Microchip Technology Inc AS29LV016JBRGR-55/XT

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    Ameya Holding Limited AS29LV016JBRGR-55/XT 275
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    AS29LV Datasheets (142)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS29LV016 Austin Semiconductor 16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory Original PDF
    AS29LV160 Alliance Semiconductor 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM Original PDF
    AS29LV160-120 Alliance Semiconductor 3V 2M x 8 / 1M x 16 - CMOS FLASH EEPROM Original PDF
    AS29LV160-80 Alliance Semiconductor 3V 2M x 8 / 1M x 16 - CMOS FLASH EEPROM Original PDF
    AS29LV160B Alliance Semiconductor 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM Original PDF
    AS29LV160T Alliance Semiconductor 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM Original PDF
    AS29LV200B-120SC Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV200B-120SI Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV200B-120TC Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    AS29LV200B-120TI Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    AS29LV200B-55SC Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV200B-55SI Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV200B-55TC Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    AS29LV200B-55TI Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    AS29LV200B-70SC Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV200B-70SI Alliance Semiconductor Flash Memory, 2Mbit, Sectored, 3.3V Supply, SOP, 44-Pin Original PDF
    AS29LV400 Alliance Semiconductor 3V 512K x 8-256K x 16 CMOS Flash EEPROM Original PDF
    AS29LV400 Alliance Semiconductor 3V 512K x 8-256K x 16 CMOS Flash EEPROM Original PDF
    AS29LV400B-120SC Alliance Semiconductor 3V 512K x 8/256K x 16 CMOS flash EEPROM, 120ns access time Original PDF
    AS29LV400B-120SC Alliance Semiconductor CMOS FLASH EEPROM Original PDF
    ...

    AS29LV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29LV800-90

    Abstract: 29LV800-70R 29LV8008 AS29LV800
    Text: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)


    Original     		PDF AS29LV800 8/512K 8/512K 29LV800-90 29LV800-70R 29LV8008 AS29LV800

    29LV8008

    Abstract: a6ll AS29LV800T 29LV800-90
    Text: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts


    Original     		PDF AS29LV800 8/512K 8/512K 29LV8008 a6ll AS29LV800T 29LV800-90

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation


    Original     		PDF AS29LV016J 16-Bit) AS29LV016 128-word/256-byte 8-word/16-byte 48-pin

    AS29LV016

    Abstract: No abstract text available
    Text: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS „ Commercial Off The Shelf, up-screened device


    Original     		PDF AS29LV016 16-Bit) 200nm AS29LV016

    29lv400

    Abstract: 29LV400-120 29LV400-90 AS29LV400
    Text: AS29LV400 Preliminary Information March 2001 3V 512K x 8/256K x 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts


    Original     		PDF AS29LV400 8/256K 48-pin 44-pin 512Kx8/256Kx16 29lv400 29LV400-120 29LV400-90 AS29LV400

    TSOP1-48

    Abstract: No abstract text available
    Text: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS Single Power Supply Operation


    Original     		PDF AS29LV016J 16-Bit) AS29LV016 128-word/256-byte AS29LV016J TSOP1-48

    Device-List

    Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
    Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera


    Original     		PDF LabTool-48 AC29LV400B AC29LV400T M6759 M8720 AS29F040 Device-List NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15

    Flash

    Abstract: AS29LV016 S29LV016
    Text: COTS PEM BOOT SECTOR FLASH AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS High performance — Access times as fast as 70 ns @ Enhanced Temp [/ET] Commercial Off The Shelf, up-screened device


    Original     		PDF AS29LV016 16-Bit) 200nm Flash AS29LV016 S29LV016

    NEC D2732D

    Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
    Text: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44


    Original     		PDF Dataman-48 M6759 M8720 AS29LV800B AS29LV800T EP1210 EP220 NEC D2732D nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25

    39SF020A

    Abstract: 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ
    Text: Labtool-148C Version 3.30 <ALL> Device List ACTRANS AC29LV400B *44PS AC29LV400B *48TS ALi M6759 *44 M8720 Page 1 of 13 AC29LV400T *44PS AC29LV400T *48TS Alliance AS29F040 AS29LV400T *48TS AS29LV800T *48TS AS29LV400B *44PS AS29LV800B *44PS AS29LV400B *48TS


    Original     		PDF Labtool-148C AC29LV400B M6759 M8720 AC29LV400T AS29F040 AS29LV400T AS29LV800T 39SF020A 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ

    atc 93lc46

    Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
    Text: LabTool-48XP Version 5.60 <ALL> Device List Page 1 of 23 ACTRANS AC29LV400B *44PS AC39VF080 *40TS AC29LV400B *48TS AC39VF088 *48TS AC29LV400T *44PS AC39VF800 *48TS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV400B *48TS


    Original     		PDF LabTool-48XP AC29LV400B AC39VF080 AC39VF088 AC29LV400T AC39VF800 M6759 atc 93lc46 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020

    TSOP1-48

    Abstract: AS29LV016JTRGR-70/XT
    Text: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single Power Supply Operation – Full voltage range: 2.7 to 3.6 volt read and write operations for


    Original     		PDF AS29LV016J 16-Bit) AS29LV016 128-word/256-byte 8-word/16-byte AS29LV016J TSOP1-48 AS29LV016JTRGR-70/XT

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation


    Original     		PDF AS29LV016J 16-Bit) AS29LV016 128-word/256-byte 8-word/16-byte AS29LV016J

    29LV800-90

    Abstract: 29LV800 AS29LV800
    Text: Advanced Information AS29LV800 October 2000 3V 1Mx8/512K×16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors


    Original     		PDF AS29LV800 8/512K 29LV800-90 29LV800 AS29LV800

    Untitled

    Abstract: No abstract text available
    Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan     		PDF AS29LV800 1MX8/512KX16 8/512K 64Kbyte 32Kword write/S29LV800T-120SI AS29LV800T-150SC AS29LV800T-150SI AS29IV800B-80SC AS29D/800B-80SI

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29LV008 A 3V 1 M x 8 C M O S Flash EEPROM Features • Organization: 1M x 8 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - Boot code sector architecture— T top or B (bottom) - &ase any combination o f sectors or full chip


    OCR Scan     		PDF AS29LV008 64Kbyte 28-pin 32-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29LV008 II 3V 1Mx 8 CMOS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d fifte e n 64K b y te secto rs - B oot c o d e se c to r a rc h ite c tu re — T top o r B (b o tto m )


    OCR Scan     		PDF AS29LV008 a100T 008-100T 008-120TC 008-120T 008-150TC 008-150T AS29LV008-80SC AS29Lv008-80SI S29LV

    29LVS00

    Abstract: 29LV800 AS29 AS29LV800 LI400
    Text: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)


    OCR Scan     		PDF 8/512Kx AS29LV800 1Mx8/512Kx16 64Kbyte 32Kword AS29IV800T80SE AS29D/800T-100SC AS29D/800T-100SI AS29LV800T-120SC AS29LV800T-120SI 29LVS00 29LV800 AS29 AS29LV800 LI400

    Untitled

    Abstract: No abstract text available
    Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan     		PDF AS29LV800 1MX8/512KX16 8/512K 64Kbyte 32Kword write/20SC AS29LV800T-120SI AS29LV800T-150SC AS29LV800T-150SI 44-pin

    29LV008

    Abstract: 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI
    Text: H ig h p e rfo rm a n c e 8 M egabit 3V CMOS Flash EEPROM AS29LV008 II A 8 Megabit CMOS FJüsh EPRO M Advance information Features • Organization: 1M x 8 • Sector architecture • Low pow er consumption - 10 m A typical re a d c u rre n t - 3 0 m A typical p ro g ra m c u rre n t


    OCR Scan     		PDF AS29LV008 10x20 9LV008-80TC AS29LV008-80TI AS29LV008-100TC AS29LV008-1OOTI AS29LVD08-120TC 9LV008-120TI AS29LV008- AS29LV008-1SOTI 29LV008 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29LV002 3V 256Kx8 CMOS Flash EE PROM Features • O rganization: 256K x8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip


    OCR Scan     		PDF AS29LV002 256Kx8 002T-120LC AS29LV 002T-120LI S29LV 002T-150LC 002T-150LI AS29LV002

    Untitled

    Abstract: No abstract text available
    Text: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture


    OCR Scan     		PDF 8/512K AS29LV800 AS29LV800-I20TC AS29LV800-120TI AS29LV800-150TC AS29LV800-150TI AS29LV800-100SC AS29LV8Ã 0-J00SI AS29LV800-100TC

    Untitled

    Abstract: No abstract text available
    Text: H igh perfo rm an ce 8 M egabit 3V CMOS Flash EEPROM . AS29LV008 II A 8 M eg ab it C M O S F la sh E P R O M Advance inform ation Features • Organization: 1M x 8 • Sector architecture - O ne 16K; tw o 8 • L o w p o w e r c o n s u m p t io n - 10 m A typical re a d c u rre n t


    OCR Scan     		PDF AS29LV008 programmiAS29LV008-100TC AS29LV008-100TI AS29LV008-120TC AS29LV008-120TI AS29LV008-150TC AS29LV008-1S0TI AS29LV008-80SC AS29LV 008-100SC

    Untitled

    Abstract: No abstract text available
    Text: H igh p erform ance 256KX8 3V CMOS Flash EEPROM H AS29LV002 A 2S6KX8 CMOS Flash EEPROM Prelim inary inform ation Features • O rg a n iz a tio n : 256 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top o r B (bottom )


    OCR Scan     		PDF 256KX8 AS29LV002 r80LC AS29LVQQ2T-1001C AS29LVQ02T-1POLI AS29LV002T-120LC AS29LV002T-120LI AS29LV002T-150LC AS29LV002T-ISOLI 10x20