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Catalog Datasheet	MFG & Type	Document Tags	PDF
G9906-01 Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.	Original	G9906-01 G9906-01 SE-171 KIRD1075E02 KIRD1075E02 photodiode InGaAs NEP	PDF

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G9906-01

Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.

Original

G9906-01 G9906-01 SE-171 KIRD1075E02 KIRD1075E02 photodiode InGaAs NEP

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